| 臺大學術典藏 |
2021-12-30T03:02:05Z |
2 um electroluminescence from the Si/Si0.2Ge0.8 type II heterojunction
|
M. H. Liao; T.-H. Cheng; C. W. Liu; Lingyen Yeh; T.-L. Lee; M.-S. Liang; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:05Z |
A Novel Surface Nano-Structure Design for SiGe/Si Type-II Hetero-Junction Solar Cell
|
M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:04Z |
Applications of positron annihilation, photoluminescence, and Raman spectroscopies to analyze the defect near the Si0.5Ge0.5/Si interface with super quality by diluted HF treatment
|
C.-H. Chen; M.-H. Liao; K.-R. Lee; W.-S. Hong; K.-S. Liao; M.-C. Hung; W.-S. Wang; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:04Z |
An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures
|
M.-H. Liao; L. C. Chang; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:04Z |
Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress
|
Chun-Heng Chen; Ming Han Liao; Fu-Chien Chiu; Huey-Liang Hwang; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:04Z |
An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures
|
M. H. Liao; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:03Z |
Infrared emission from Ge metsl-isulator-semiconductor tunneling diodes
|
M. H. Liao; T.-H. Cheng; C. W. Liu; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:03Z |
Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering
|
Shu-Tong Chang; Ming-Han Liao; Chang-Chun Lee; Jacky Huang; Bing-Fong Hsieh; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:02Z |
Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications
|
K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:02Z |
Nano-textured photonic crystal light-emitting diodes and solar cells
|
M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:02Z |
Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics
|
S.-C. Chen; S.-Y. Huang; S. Sakalley; A. Paliwal; Y.-H. Chen; M.-H. Liao; H. Sun; S. Biring; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:01Z |
SiGe Quantum Well Metal-Insulator-Semiconductor Light-Emitting Diodes
|
M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:01Z |
Strain Engineering of Nanoscale Strained Si MOS Devices
|
B.-F. Hsieh; S. T. Chang; W.-C.Wang; M.-H. Liao; C.-C. Lee; J. Huang; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:00Z |
The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM Capacitors
|
C. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:00Z |
Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions by SIMS and C-V measurement on the designed test pattern
|
M.-H. Liao; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:00Z |
The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design
|
M.-H. Liao; S. C. Huang; C. Y. Liu; P. G. Chen; S. C. Kao; C. Lien; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:59Z |
The investigation on Dislocation Edge Stress Effects for Si N-MOSFETs
|
M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:59Z |
The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
|
M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:59Z |
The Dependence of the Performance of Strained NMOSFETs on Channel Width
|
Lingyen Yeh; Ming Han Liao; Chun Heng Chen; Jun Wu; Joseph Ya-min Lee; Chee Wee Liu; T. L. Lee; M. S. Liang; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:58Z |
Local stress determination in shallow trench insulator structures with one side and two sides pad SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization
|
M. H. Liao; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:58Z |
Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes
|
M. H. Liao; C.-Y. Yu; T.-H. Guo; C.-H. Lin; C. W. Liu; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:58Z |
The Systematic Study and Simulation Modeling on Dislocation Edge Stress Effects for Si N-MOSFETs
|
M.-H. Liao; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:58Z |
A Novel Stress Design for the Type-II Hetero-Junction Solar Cell with Superior Performance
|
M.-H. Liao; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:57Z |
Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis
|
M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:57Z |
Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by Polarized micro-Raman spectroscopy extraction and mechanical modelization
|
M.-H. Liao; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:56Z |
strained Pt Schottky diodes on n-type Si and Ge
|
M. H. Liao; P.-S. Kuo; S.-R. Jan; S.-T. Chang; C. W. Liu; MING-HAN LIAO |
| 臺大學術典藏 |
2021-09-21T23:19:25Z |
In-Sn-Zn oxide nanocomposite films with enhanced electrical properties deposited by high-power impulse magnetron sputtering
|
Sun, Hui; Li, Zhi Yue; Chen, Sheng Chi; MING-HAN LIAO; Gong, Jian Hong; Bai, Zhamatuofu; Wang, Wan Xia |
| 臺大學術典藏 |
2021-08-05T02:37:33Z |
The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs
|
Lu P.-Y;Yen C.-M;Chang S.-Y;Feng Y.-J;Lien C;Hu C.-W;Yao C.-W;Lee M.-H;Liao M.-H.; Lu P.-Y; Yen C.-M; Chang S.-Y; Feng Y.-J; Lien C; Hu C.-W; Yao C.-W; Lee M.-H; Liao M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2021-08-05T02:37:33Z |
Performance characteristics of strained Ge p-FinFETs under the integration of lattice and self-heating stress enabled by process-oriented finite element simulation
|
Lee C.-C;Hsieh C.-P;Huang P.-C;Liao M.-H.; Lee C.-C; Hsieh C.-P; Huang P.-C; Liao M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2021-08-05T02:37:33Z |
Multi-ferroic properties on bifeo3/batio3 multi-layer thin-film structures with the strong magneto-electric effect for the application of magneto-electric devices
|
Hu C.-W;Yen C.-M;Feng Y.-C;Chen L.-H;Liao B.-Z;Chen S.-C;Liao M.-H.; Hu C.-W; Yen C.-M; Feng Y.-C; Chen L.-H; Liao B.-Z; Chen S.-C; Liao M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2021-02-04T02:49:00Z |
The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter System
|
Liao, M.-H.; Huang, K.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; Liao, M.-H.; Huang, K.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO; WEI-JIUN SU |
| 臺大學術典藏 |
2021-02-04T02:49:00Z |
The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators
|
Liao, M.-H.; Wu, C.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; Liao, M.-H.; Wu, C.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO; WEI-JIUN SU |
| 臺大學術典藏 |
2021-02-04T02:49:00Z |
The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance
|
Liao, M.-H.; Lu, P.-Y.; Su, W.-J.; Chen, S.-C.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; Liao, M.-H.; Lu, P.-Y.; Su, W.-J.; Chen, S.-C.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO; WEI-JIUN SU; C. ROBERT KAO |
| 臺大學術典藏 |
2021-02-04T02:48:59Z |
p-type semi-transparent conductive NiO films with high deposition rate produced by superimposed high power impulse magnetron sputtering
|
Chuang, T.-H.; Wen, C.-K.; Chen, S.-C.; Liao, M.-H.; Liu, F.; Sun, H.; Chuang, T.-H.; Wen, C.-K.; Chen, S.-C.; Liao, M.-H.; Liu, F.; Sun, H.; MING-HAN LIAO; TUNG-HAN CHUANG |
| 臺大學術典藏 |
2021-02-04T02:48:59Z |
Influence of sputtering power on the electrical properties of In-Sn-Zn oxide thin films deposited by high power impulse magnetron sputtering
|
Li, Z.-Y.; Chen, S.-C.; Huo, Q.-H.; Liao, M.-H.; Dai, M.-J.; Lin, S.-S.; Yang, T.-L.; Sun, H.; Li, Z.-Y.; Chen, S.-C.; Huo, Q.-H.; Liao, M.-H.; Dai, M.-J.; Lin, S.-S.; Yang, T.-L.; Sun, H.; MING-HAN LIAO |
| 臺大學術典藏 |
2021-02-04T02:48:59Z |
Double Layers Omega FETs with Ferroelectric HfZrO 2 for One-Transistor Memory
|
Chen, K.-T.; Lo, C.; Lin, Y.-Y.; Chueh, C.-Y.; Chang, C.; Siang, G.-Y.; Tseng, Y.-J.; Yang, Y.-J.; Hsieh, F.-C.; Chang, S.-H.; Liang, H.; Chiang, S.-H.; Liu, J.-H.; Lin, Y.-D.; Yeh, P.-C.; Wang, C.-Y.; Yang, H.-Y.; Tzeng, P.-J.; Liao, M.-H.; Chang, S.T.; Tseng, Y.-Y.; Lee, M.H.; MING-HAN LIAO; Chen, K.-T. et al. |
| 臺大學術典藏 |
2021-02-04T02:48:59Z |
Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf 0.25 Zr 0.75 O 2 Negative Capacitance FETs
|
Lee, M.H.; Lin, Y.-Y.; Yang, Y.-J.; Hsieh, F.-C.; Chang, S.T.; Liao, M.-H.; Li, K.-S.; Liu, C.W.; Chen, K.-T.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Chen, H.-Y.; Tseng, Y.-J.; Chueh, C.-Y.; Chang, C.; MING-HAN LIAO; Lee, M.H. et al. |
| 臺大學術典藏 |
2021-02-04T02:48:58Z |
The Investigation for Thickness-Dependent Electrical Performance on BaTiO3 /BiFeO3 Bilayer Ferromagnetic Capacitors
|
Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Yang, C.-S.; Lee, M.-H.; Xu, J.-J.; Hu, C.-W.; Huang, C.; Chang, S.-Z.; Liao, M.-H.; Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Yang, C.-S.; Lee, M.-H.; Xu, J.-J.; Hu, C.-W.; Huang, C.; Chang, S.-Z.; Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2021-02-04T02:48:58Z |
The real demonstration of High-Quality Carbon Nano-Tubes (CNTs) as the electrical connection for the potential application in a vertical 3D integrated technology
|
Lu, P.-Y.; Li, Y.-R.; Yen, C.-M.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; Liao, M.-H.; Lu, P.-Y.; Li, Y.-R.; Yen, C.-M.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2021-02-02T09:21:27Z |
Multi-ferroic properties on bifeo3/batio3 multi-layer thin-film structures with the strong magneto-electric effect for the application of magneto-electric devices
|
Hu, Cheng Wei; Yen, Ching Min; Feng, Yu Chia; Chen, Liang Hsi; Liao, Bo Zhou; Chen, Sheng Chi; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:45Z |
Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering
|
Chang, Shu-Tong; Liao, Ming-Han; Lee, Chang-Chun; Huang, Jacky; Wang, Wei-Ching; Hsieh, Bing-Fong; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:44Z |
Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036]
|
Liao, M.-H.; Chen, C. H.; Chang, L. C.; Yang, C.; Kao, S. C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:44Z |
RETRACTED: The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design
|
MING-HAN LIAO;Liao, M.H.; Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:44Z |
RETRACTED: The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design
|
MING-HAN LIAO;Liao, M.H.; Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:44Z |
The novel chamber hardware design to improve the thin film deposition quality in both 12 ? (300 mm) and 18 ? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique
|
Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:44Z |
Si/SiGe hetero-junction solar cell with optimization design and theoretical analysis
|
Chang, S. T.; Liao, M. H.; Lin, W.-K.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:43Z |
In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact
|
Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:43Z |
Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115]
|
MING-HAN LIAO;Liao, M.H.; Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:43Z |
Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115]
|
MING-HAN LIAO;Liao, M.H.; Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:43Z |
Erratum: “The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique” [AIP Advances 3(7), 072117 (2013)]
|
Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO |
