| 臺大學術典藏 |
2020-01-13T08:22:45Z |
Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering
|
Chang, Shu-Tong; Liao, Ming-Han; Lee, Chang-Chun; Huang, Jacky; Wang, Wei-Ching; Hsieh, Bing-Fong; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:44Z |
Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036]
|
Liao, M.-H.; Chen, C. H.; Chang, L. C.; Yang, C.; Kao, S. C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:44Z |
RETRACTED: The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design
|
MING-HAN LIAO;Liao, M.H.; Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:44Z |
RETRACTED: The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design
|
MING-HAN LIAO;Liao, M.H.; Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:44Z |
The novel chamber hardware design to improve the thin film deposition quality in both 12 ? (300 mm) and 18 ? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique
|
Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:44Z |
Si/SiGe hetero-junction solar cell with optimization design and theoretical analysis
|
Chang, S. T.; Liao, M. H.; Lin, W.-K.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:43Z |
In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact
|
Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:43Z |
Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115]
|
MING-HAN LIAO;Liao, M.H.; Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:43Z |
Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115]
|
MING-HAN LIAO;Liao, M.H.; Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:43Z |
Erratum: “The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique” [AIP Advances 3(7), 072117 (2013)]
|
Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:43Z |
Ferroelectric HfZrO x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)
|
Chen, Kuan-Ting; Gu, Siang-Sheng; Wang, Zheng-Ying; Liao, Chun-Yu; Chou, Yu-Chen; Hong, Ruo-Chun; Chen, Shih-Yao; Chen, Hong-Yu; Siang, Gao-Yu; Lo, Chieh; Chen, Pin-Guang; Liao, M.-H.; Li, Kai-Shin; Chang, Shu-Tong; Lee, Min-Hung; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:42Z |
Electroluminescence from the Ge quantum dot MOS tunneling diodes
|
Liao, M.H.; Yu, C.-Y.; Guo, T.-H.; Lin, C.-H.; Liu, C.W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:42Z |
Abnormal hole mobility of biaxial strained Si
|
Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; Liu, C.W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:42Z |
Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers
|
Yu, C.-Y.; Chen, P.-W.; Jan, S.-R.; Liao, M.-H.; Liao, K.-F.; Liu, C.W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:42Z |
Analysis of axial cracks in hollow cylinders subjected to thermal shock by using the thermal weight function method
|
Ma, C.-C.; Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:41Z |
Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors
|
Cheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; Liu, C.W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:41Z |
The intermixing and strain effects on electroluminescence of SiGe dots
|
Liao, M.H.; Lee, C.-H.; Hung, T.A.; Liu, C.W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:41Z |
Infrared emission from Ge metal-insulator-semiconductor tunneling diodes
|
Liao, M.H.; Cheng, T.-H.; Liu, C.W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:41Z |
Buckling characteristics of SiGe layers on viscous oxide
|
Yu, C.-Y.; Lee, C.-J.; Lee, C.-Y.; Lee, J.-T.; Liao, M.H.; Liu, C.W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:40Z |
Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering
|
Chang, S.-T.; Liao, M.-H.; Lee, C.-C.; Huang, J.; Wang, W.-C.; Hsieh, B.-F.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:40Z |
Optimal stress design in p-MOSFET with superior performance
|
Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:40Z |
Blue electroluminescence from metal/oxide/6H-SiC tunneling diodes
|
Jan, S.-R.; Cheng, T.-H.; Hung, T.-A.; Kuo, P.-S.; Liao, M.H.; Deng, Y.; Liu, C.W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:40Z |
Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
|
Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:40Z |
2.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctions
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Liao, M.H.; Cheng, T.-H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:39Z |
Si/SiGe hetero-junction solar cell with optimization design and theoretical analysis
|
Chang, S.T.; Liao, M.H.; Lin, W.-K.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:39Z |
High efficient Si nano-textured light-emitting diodes and solar cells with obvious photonic crystal effect
|
Liao, M.H.; Wang, W.-C.; Tsai, H.R.; Chang, S.T.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:39Z |
Analysis of breakdown characteristics in high-k dielectrics under electrostatic discharge impulse stress
|
Hwang, H.-L.; MING-HAN LIAO; Chen, C.-H.; Liao, M.H.; Chiu, F.-C. |
| 臺大學術典藏 |
2020-01-13T08:22:39Z |
An investigation about the limitation of strained-Si technology
|
Liao, M.H.; Yeh, L.; Lu, J.C.; Yu, M.H.; Wang, L.T.; Wu, J.; Jeng, P.-R.; Lee, T.-L.; Jang, S.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:39Z |
The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics
|
Lee, M.H.; Chang, S.T.; Weng, S.-C.; Liu, W.-H.; Chen, K.-J.; Ho, K.-Y.; Liao, M.H.; Huang, J.-J.; Hu, G.-R.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:39Z |
Strain engineering of nanoscale Si MOS devices
|
Huang, J.; Chang, S.-T.; Hsieh, B.-F.; Liao, M.-H.; Wang, W.-C.; Lee, C.-C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:38Z |
Optimized surface structure by laser treatment for the relaxation of residual stress in bent GaN film
|
Chen, C.-H.; Liao, M.-H.; Chang, L.-C.; Kao, S.-C.; Yang, C.; Yu, M.-Y.; Liu, G.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:38Z |
Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments
|
Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Kuo, C.-L.; Lin, H.-C.; Liao, M.-H.; Lee, M.-H.; Chen, M.-J.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:38Z |
High-efficient Si nanotextured light-emitting diodes and solar cells with obvious photonic crystal effect
|
Han Liao, M.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:38Z |
The investigation of optimal Si-sige hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis
|
Liao, M.H.; Chen, C.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:38Z |
The effect of surface treatment on omni-directional efficiency of the silicon solar cells with micro-spherical texture/ITO stacks
|
Chen, C.-H.; Juan, P.-C.; Liao, M.-H.; Tsai, J.-L.; Hwang, H.-L.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:37Z |
Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga 0.47As field-effect transistors
|
Liao, M.-H.; Chen, P.-K.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:37Z |
Experimental demonstration for ultra-low on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs with implant-free process
|
Liao, M.-H.; Chan, P.-G.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:37Z |
The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design
|
Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:37Z |
Experimental demonstration for the implant-free In0.53Ga 0.47As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistance
|
Liao, M.-H.; Chang, L.C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:37Z |
Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy
|
Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:37Z |
The reduction of keep-out zone (?10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits
|
Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:36Z |
Erratum: The novel chamber hardware design to improve the thin film deposition quality in both 12? (300 mm) and 18? (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique; (AIP Advances (2013) 3:7 (072117))
|
Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:36Z |
Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs"
|
Liao, M.-H.; Chen, C.H.; Chang, L.C.; Yang, C.; Kao, S.C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:36Z |
A non-linear analytic stress model for the analysis on the stress interaction between TSVs
|
Liao, M.-H.; Kao, S.-C.; Huang, S.-J.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:36Z |
Monolithic integration of GaN-based lightemitting diodes and metal-oxide-semiconductor field-effect transistors
|
Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:36Z |
The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits
|
Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structures
|
Liao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
In 0.18 Al 0.82 N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact
|
Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
Ge1 - XSix on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships
|
Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme
|
Liao, M.-H.; Huang, S.C.; MING-HAN LIAO |
