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Taiwan Academic Institutional Repository >
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"ming han liao"
Showing items 96-117 of 117 (3 Page(s) Totally)
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| 臺大學術典藏 |
2020-01-13T08:22:36Z |
The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits
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Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structures
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Liao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
In 0.18 Al 0.82 N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact
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Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
Ge1 - XSix on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships
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Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme
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Liao, M.-H.; Huang, S.C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators
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Liao, M.-H.; Lien, C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors
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Hsieh, C.-P.; Liao, M.-H.; Lee, C.-C.; Cheng, T.-C.; Wang, C.-P.; Huang, P.-C.; Cheng, S.-W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply
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Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices
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Liao, M.-H.; Huang, K.-C.; Tsai, F.-A.; Liu, C.-Y.; Lien, C.; Lee, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel
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Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect
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Liao, M.-H.; Huang, H.-Y.; Tsai, F.-A.; Chuang, C.-C.; Hsu, M.-H.; Lee, C.-C.; Lee, M.-H.; Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Wu, H.-S.; Yao, C.-W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
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Liao, M.-H.; Hsieh, C.-P.; Lee, C.-C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:33Z |
Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics
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Chen, S.-C.; Huang, S.-Y.; Sakalley, S.; Paliwal, A.; Chen, Y.-H.; Liao, M.-H.; Sun, H.; Biring, S.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:33Z |
Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications
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Chen, K.-T.; Chen, H.-Y.; Liao, C.-Y.; Siang, G.-Y.; Lo, C.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:33Z |
Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode
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Chen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:33Z |
Retraction notice to “The demonstration of a high efficient SiGe Type-II hetero-junction solar cell with an optimal stress design” [Thin Solid Films, 544 (2013) 112-115](S0040609013007360)(10.1016/j.tsf.2013.04.100)
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Liao, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:33Z |
Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)
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Chen, K.; Gu, S.; Wang, Z.; Liao, C.; Chou, Y.; Hong, R.; Chen, S.; Chen, H.; Siang, G.; Le, J.; Chen, P.; Liao, M.; Li, K.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:32Z |
Comparison of microstructures and magnetic properties in FePt alloy films deposited by direct current magnetron sputtering and high power impulse magnetron sputtering
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Yang, W.-S.; Sun, T.-H.; Chen, S.-C.; Jen, S.-U.; Guo, H.-J.; Liao, M.-H.; Chen, J.-R.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:32Z |
Ferroelectric HfZrO2 FETs for steep switch onset
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Chen, K.-T.; Liao, C.-Y.; Chen, H.-Y.; Lo, C.; Siang, G.-Y.; Lin, Y.-Y.; Tseng, Y.-J.; Chang, C.; Chueh, C.-Y.; Yang, Y.-J.; Liao, M.-H.; Li, K.-S.; Chang, S.T.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2016 |
Comprehensive investigation on array-type dummy active diffused region and gate geometries using narrow NMOSFETs with SiC S/D stressors
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Guo, Yu Huan; MING-HAN LIAO; Lee, Chang Chun; Cheng, Sen Wen; Hsieh, Chia Ping; Liao, Ming Han; MING-HAN LIAO;Guo, Yu Huan;Liao, Ming Han;Hsieh, Chia Ping;Cheng, Sen Wen;Lee, Chang Chun |
| 臺大學術典藏 |
2016 |
Comprehensive investigation on array-type dummy active diffused region and gate geometries using narrow NMOSFETs with SiC S/D stressors
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Guo, Yu Huan; MING-HAN LIAO; Lee, Chang Chun; Cheng, Sen Wen; Hsieh, Chia Ping; Liao, Ming Han; MING-HAN LIAO;Guo, Yu Huan;Liao, Ming Han;Hsieh, Chia Ping;Cheng, Sen Wen;Lee, Chang Chun |
| 臺大學術典藏 |
2005 |
Electroluminescence from metal/oxide/strained-Si tunneling diodes
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Liao, M.H.; Chen, M.-J.; Chen, T.C.; Wang, P.-L.; Liu, C.W.; MING-HAN LIAO |
Showing items 96-117 of 117 (3 Page(s) Totally)
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