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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"ming han liao"的相關文件
顯示項目 96-105 / 117 (共12頁)
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| 臺大學術典藏 |
2020-01-13T08:22:36Z |
The special trench design near the through silicon vias (TSVs) to reduce the keep-out zone for application in three-dimensional integral circuits
|
Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
Performance enhancement for the triboelectric energy harvester by using interfacial micro-dome array structures
|
Liao, M.-H.; Huang, H.-Y.; Chuang, C.-C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
In 0.18 Al 0.82 N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact
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Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
Ge1 - XSix on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships
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Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme
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Liao, M.-H.; Huang, S.C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators
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Liao, M.-H.; Lien, C.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:35Z |
Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors
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Hsieh, C.-P.; Liao, M.-H.; Lee, C.-C.; Cheng, T.-C.; Wang, C.-P.; Huang, P.-C.; Cheng, S.-W.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply
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Lee, Y.-J.; Yang, Z.-P.; Chen, P.-G.; Hsieh, Y.-A.; Yao, Y.-C.; Liao, M.-H.; Lee, M.-H.; Wang, M.-T.; Hwang, J.-M.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices
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Liao, M.-H.; Huang, K.-C.; Tsai, F.-A.; Liu, C.-Y.; Lien, C.; Lee, M.-H.; MING-HAN LIAO |
| 臺大學術典藏 |
2020-01-13T08:22:34Z |
The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel
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Lee, C.-C.; Hsu, H.-W.; Liao, M.-H.; MING-HAN LIAO |
顯示項目 96-105 / 117 (共12頁)
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