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Taiwan Academic Institutional Repository >
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"minghwei hong"
Showing items 181-205 of 801 (33 Page(s) Totally) << < 3 4 5 6 7 8 9 10 11 12 > >> View [10|25|50] records per page
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission study
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Cheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
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Young, L.B.;Cheng, C.-K.;Lu, G.-J.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Li, M.-Y.;Cai, R.-F.;Lo, S.-C.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2
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Chen, K.H.M.; Lin, H.Y.; Yang, S.R.; Cheng, C.K.; Zhang, X.Q.; Cheng, C.M.; Lee, S.F.; Hsu, C.H.; Lee, Y.H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Surface electronic structure of epi germanium (001)-2 ? 1
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Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study
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Chang, T.W.; Lin, K.Y.; Lin, Y.H.; Young, L.B.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface
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Wan, H.W.; Lin, Y.H.; Lin, K.Y.; Chang, T.W.; Cai, R.F.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y 2 O 3 /Al 2 O 3 on GaAs(001)
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Lin, K.Y.;Young, L.B.;Cheng, C.K.;Chen, K.H.;Lin, Y.H.;Wan, H.W.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Kwo, J.;Hong, M.; Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
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Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 ??In comparison with atomic layer deposited Al2O3
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Wan, H.W.;Lin, K.Y.;Cheng, C.K.;Su, Y.K.;Lee, W.C.;Hsu, C.H.;Pi, T.W.;Kwo, J.;Hong, M.; Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
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Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:13Z |
High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering
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Wu, C.N.;Tseng, C.C.;Lin, K.Y.;Cheng, C.K.;Yeh, S.L.;Fanchiang, Y.T.;Hong, M.;Kwo, J.; Wu, C.N.; Tseng, C.C.; Lin, K.Y.; Cheng, C.K.; Yeh, S.L.; Fanchiang, Y.T.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:12Z |
Topological insulator Bi 2 Se 3 films on rare earth iron garnets and their high-quality interfaces
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Chen, C.C.;Chen, K.H.M.;Fanchiang, Y.T.;Tseng, C.C.;Yang, S.R.;Wu, C.N.;Guo, M.X.;Cheng, C.K.;Huang, S.W.;Lin, K.Y.;Wu, C.T.;Hong, M.;Kwo, J.; Chen, C.C.; Chen, K.H.M.; Fanchiang, Y.T.; Tseng, C.C.; Yang, S.R.; Wu, C.N.; Guo, M.X.; Cheng, C.K.; Huang, S.W.; Lin, K.Y.; Wu, C.T.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:11Z |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
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MINGHWEI HONG; Hong, M.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Lin, K.Y.;Wan, H.W.;Chen, K.H.M.;Fanchiang, Y.T.;Chen, W.S.;Lin, Y.H.;Cheng, Y.T.;Chen, C.C.;Lin, H.Y.;Young, L.B.;Cheng, C.P.;Pi, T.W.;Kwo, J.;Hong, M.; Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B. |
| 臺大學術典藏 |
2018-09-10T15:32:24Z |
Detection of topological surface states by spin pumping at room temperature
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Fanchiang, YT;Cheng, CK;Hong, M;Lin, HY;Chen, KH;Yang, SR;Wu, CN;Kwo, J;Lee, SF; Fanchiang, YT; Cheng, CK; Hong, M; Lin, HY; Chen, KH; Yang, SR; Wu, CN; Kwo, J; Lee, SF; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:32:24Z |
High quality topological insulator thin films grown by molecular beam epitaxy using MoS2 monolayer as buffer layer
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Chen, KH;Lin, HY;Wang, CY;Yang, SR;Kwo, J;Cheng, CK;Hong, M;Zhang, XQ;Lee, YH; Chen, KH; Lin, HY; Wang, CY; Yang, SR; Kwo, J; Cheng, CK; Hong, M; Zhang, XQ; Lee, YH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping
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Wu, CN;Lin, YH;Fanchiang, YT;Hung, HY;Lin, HY;Lin, PH;Lin, JG;Lee, SF;Hong, M;Kwo, J; Wu, CN; Lin, YH; Fanchiang, YT; Hung, HY; Lin, HY; Lin, PH; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process
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Fu, CH;Lin, YH;Lee, WC;Lin, TD;Chu, RL;Chu, LK;Chang, P;Chen, MH;Hsueh, WJ;Chen, SH;others; Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In) GaAs surfaces: electronic and electric structures
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Pi, TW;Lin, YH;Fanchiang, YT;Chiang, TH;Wei, CH;Lin, YC;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, YH; Fanchiang, YT; Chiang, TH; Wei, CH; Lin, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Single-crystal atomic layer deposited Y 2 O 3 on GaAs (001)-growth, structural, and electrical characterization
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Wu, SY;Chen, KH;Lin, YH;Cheng, CK;Hsu, CH;Kwo, J;Hong, M; Wu, SY; Chen, KH; Lin, YH; Cheng, CK; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Investigation of the transport properties of Bi2 Se3 films grown on various substrates
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Lin, HY;Wang, CY;Chen, KHM;Lin, YH;Chen, KH;Yang, BY;Hong, M;Kwo, J; Lin, HY; Wang, CY; Chen, KHM; Lin, YH; Chen, KH; Yang, BY; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Demonstration of large field effect in topological insulator films via a high-kappa back gate
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Wang, CY;Lin, HY;Lin, YH;Chen, KH;Yang, BY;Chen, KHM;Peng, ZJ;Lee, SF;Hong, M;Kwo, J; Wang, CY; Lin, HY; Lin, YH; Chen, KH; Yang, BY; Chen, KHM; Peng, ZJ; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interface
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Chu, Jui-Lin;Hong, Ming-Hwei;Kwo, Juei-Nai;Pi, Tun-Wen;Chyi, Jen-Inn; Chu, Jui-Lin; Hong, Ming-Hwei; Kwo, Juei-Nai; Pi, Tun-Wen; Chyi, Jen-Inn; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs (111) A-2$\\times$ 2 from atomic layer deposition
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Fanchiang, Yu-Ting;Chiang, Tsung-Hung;Pi, Tun-Wen;Wertheim, Gunther K;Kwo, J Raynien;Hong, Minghwei; Fanchiang, Yu-Ting; Chiang, Tsung-Hung; Pi, Tun-Wen; Wertheim, Gunther K; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Epitaxial ferromagnetic Fe3Si on GaAs (111) A with atomically smooth surface and interface
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Liu, YC; Chen, YW; Tseng, SC; Chang, MT; Lo, SC; Lin, YH; Cheng, CK; Hung, HY; Hsu, CH; Kwo, J; others; MINGHWEI HONG; Liu, YC;Chen, YW;Tseng, SC;Chang, MT;Lo, SC;Lin, YH;Cheng, CK;Hung, HY;Hsu, CH;Kwo, J;others |
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Single-Crystal Y2O3 Epitaxially on GaAs (001) and (111) Using Atomic Layer Deposition
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Lin, YH;Cheng, CK;Chen, KH;Fu, CH;Chang, TW;Hsu, CH;Kwo, J;Hong, M; Lin, YH; Cheng, CK; Chen, KH; Fu, CH; Chang, TW; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG |
Showing items 181-205 of 801 (33 Page(s) Totally) << < 3 4 5 6 7 8 9 10 11 12 > >> View [10|25|50] records per page
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