|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"minghwei hong"
Showing items 216-265 of 801 (17 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Semiconductor-insulator Interfaces, High $κ$ Dielectrics on (In) GaAs
|
Pi, TW;Lin, TD;Chang, WH;Chang, YC;Hong, M;Kwo, J; Pi, TW; Lin, TD; Chang, WH; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:27Z |
MOS Devices with Ultra-High Dielectric Constants and Methods of Forming the Same
|
Liao, Ming-Han;Hong, Minghwei; Liao, Ming-Han; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Interfacial electronic structure of trimethyl-aluminum and water on an In0. 20Ga0. 80As (001)-4$\\times$ 2 surface: A high-resolution core-level photoemission study
|
Pi, TW;Lin, HY;Chiang, TH;Liu, YT;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, HY; Chiang, TH; Liu, YT; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2
|
MINGHWEI HONG; Hong, M; Kwo, J; Chen, Min-Cheng; Lee, MY; Hong, PF; Chang, YC; Chang, YH; Lin, TD;Chang, WH;Chu, RL;Chang, YC;Chang, YH;Lee, MY;Hong, PF;Chen, Min-Cheng;Kwo, J;Hong, M; Lin, TD; Chang, WH; Chu, RL |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Inversion-channel GaAs (100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces
|
Chang, YC;Chang, WH;Merckling, C;Kwo, J;Hong, M; Chang, YC; Chang, WH; Merckling, C; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Surface Passivation of GaSb (100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative Study
|
others; MINGHWEI HONG; Chu, Rei-Lin;Hsueh, Wei-Jen;Chiang, Tsung-Hung;Lee, Wei-Chin;Lin, Hsiao-Yu;Lin, Tsung-Da;Brown, Gail J;Chyi, Jen-Inn;Huang, Tsung-Shiew;Pi, Tun-Wen;others; Chu, Rei-Lin; Hsueh, Wei-Jen; Chiang, Tsung-Hung; Lee, Wei-Chin; Lin, Hsiao-Yu; Lin, Tsung-Da; Brown, Gail J; Chyi, Jen-Inn; Huang, Tsung-Shiew; Pi, Tun-Wen |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y 2 O 3-buffered Si (111)
|
Kuo, CC;Liu, W-R;Lin, BH;Hsieh, WF;Hsu, C-H;Lee, WC;Hong, M;Kwo, J; Kuo, CC; Liu, W-R; Lin, BH; Hsieh, WF; Hsu, C-H; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Phase Transformation of Molecular Beam Epitaxy-Grown Nanometer-Thick Gd2O3 and Y2O3 on GaN
|
Chang, Wen-Hsin;Wu, Shao-Yun;Lee, Chih-Hsun;Lai, Te-Yang;Lee, Yi-Jun;Chang, Pen;Hsu, Chia-Hung;Huang, Tsung-Shiew;Kwo, J Raynien;Hong, Minghwei; Chang, Wen-Hsin; Wu, Shao-Yun; Lee, Chih-Hsun; Lai, Te-Yang; Lee, Yi-Jun; Chang, Pen; Hsu, Chia-Hung; Huang, Tsung-Shiew; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4$\\times$ 6 and As-rich GaAs (001)-2$\\times$ 4 surfaces: a synchrotron radiation photoemission study
|
Pi, Tun-Wen;Lin, Hsiao-Yu;Liu, Ya-Ting;Lin, Tsung-Da;Wertheim, Gunther K;Kwo, Jueinai;Hong, Minghwei; Pi, Tun-Wen; Lin, Hsiao-Yu; Liu, Ya-Ting; Lin, Tsung-Da; Wertheim, Gunther K; Kwo, Jueinai; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition
|
Chiang, TH; Liu, YT; Chang, YC; Lin, TD; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG; Pi, TW;Lin, HY;Chiang, TH;Liu, YT;Chang, YC;Lin, TD;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, HY |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe3Si films with normal metals Au and Pt
|
Hung, HY;Luo, GY;Chiu, YC;Chang, P;Lee, WC;Lin, JG;Lee, SF;Hong, M;Kwo, J; Hung, HY; Luo, GY; Chiu, YC; Chang, P; Lee, WC; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
Mapping the band profile across the Gd2O3/GaAs (100) hetero-interface by using scanning tunneling microscopy
|
Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, MH; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
TL-BASED SUPERCONDUCTING FILMS BY SPUTTERING USING ASINGLE TARGET
|
Kwo, J; Bacon, DD; MINGHWEI HONG; Hong, M;Kortan, AR;Kwo, J;Bacon, DD; Hong, M; Kortan, AR |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
$\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ As
|
Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
PROPERTIES OF IN-SITU SUPERCONDUCTING Y1Ba2Cu2O7 x FILMS BY
|
Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)
|
Liu, W-R; Lin, BH; Kuo, CC; Lee, WC; Hong, M; Kwo, J; Hsu, C-H; Hsieh, WF; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
|
Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a $γ$-Al 2 O 3 buffer layer
|
Liu, W-R; Lin, BH; Yang, S; Kuo, CC; Li, Y-H; Hsu, C-H; Hsieh, WF; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Correlation between oxygen vacancies and magnetism in Mn-doped Y2O3 nanocrystals investigated by defect engineering techniques
|
Wu, TS; Chen, YC; Shiu, YF; Peng, HJ; Chang, SL; Lee, HY; Chu, PP; Hsu, CW; Chou, LJ; Pao, CW; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films
|
Wu, CN; Huang, SY; Lee, WC; Chang, YH; Wu, TS; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001),(110), and (111)
|
Chu, Lung-Kun; Merckling, Clement; Dekoster, Johan; Kwo, Jueinai Raynien; Hong, Minghwei; Caymax, Matty; Heyns, Marc; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Growth mechanism of atomic layer deposited Al2O3 on GaAs (001)-4$\\times$ 6 surface with trimethylaluminum and water as precursors
|
Huang, ML;Chang, YH;Lin, TD;Lin, HY;Liu, YT;Pi, TW;Hong, M;Kwo, J; Huang, ML; Chang, YH; Lin, TD; Lin, HY; Liu, YT; Pi, TW; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
|
Chang, YH; Lin, CA; Liu, YT; Chiang, TH; Lin, HY; Huang, ML; Lin, TD; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition
|
Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As
|
Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfaces
|
Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
$\\backslash$ textit ${$In-situ$}$ photoemission analyses of ALD-oxide/In $ _ ${$x$}$ $ Ga $ _ ${$1-x$}$ $ As (001) interfaces
|
Kwo, J; MINGHWEI HONG; Hong, M; Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
高介電閘極氧化層和金屬閘極於矽和三五半導體之研究
|
Kwo, Raynien; Hong, Minghwei; Huang, Tsung-Shiew; 吳彥達; Wu, Yan-Dar; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
POWDER-PROCESSED Nb5Al SUPERCONDUCTING WIRE
|
Hong, JM;Holthuis, JT;Wu, IW;Hong, M;Morris Jr, JW; Hong, JM; Holthuis, JT; Wu, IW; Hong, M; Morris Jr, JW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
IN BRONZE-PROCESSED Nb5Sn
|
Hong, M; Wu, IW; Morris Jr, JW; Gilbert, W; Hassenzahl, WV; Taylor, C; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
MAKING A15 SUPERCONDUCTING MATERIALS
|
Hong, M;Dietderich, D;Morris Jr, JW; Hong, M; Dietderich, D; Morris Jr, JW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
064603 Surface-Atom Core-Level Shift in GaAs (III) A-2$\\times$ 2
|
Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
Pushing the material limit and physics novelty in high kappa's/high carrier mobility semiconductors for post Si CMOS
|
Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric
|
Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device
|
Chang, WH; Chiang, TH; Lin, TD; Chen, YH; Wu, KH; Huang, TS; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:14Z |
Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
|
Chu, LK;Merckling, C;Alian, A;Dekoster, J;Kwo, J;Hong, M;Caymax, M;Heyns, Marc; Chu, LK; Merckling, C; Alian, A; Dekoster, J; Kwo, J; Hong, M; Caymax, M; Heyns, Marc; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:14Z |
Atomic-layer-deposited Al 2 O 3 and HfO 2 on GaN: a comparative study on interfaces and electrical characteristics
|
Chang, YC;Huang, ML;Chang, YH;Lee, YJ;Chiu, HC;Kwo, J;Hong, M; Chang, YC; Huang, ML; Chang, YH; Lee, YJ; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
The growth of an epitaxial ZnO film on Si (111) with a Gd2O3 (Ga2O3) buffer layer
|
Lin, BH;Liu, WR;Yang, S;Kuo, CC;Hsu, C-H;Hsieh, WF;Lee, WC;Lee, YJ;Hong, M;Kwo, J; Lin, BH; Liu, WR; Yang, S; Kuo, CC; Hsu, C-H; Hsieh, WF; Lee, WC; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Epitaxial stabilization of a monoclinic phase in Y 2 O 3 films on c-plane GaN
|
Chang, WH;Chang, P;Lee, WC;Lai, TY;Kwo, J;Hsu, C-H;Hong, JM;Hong, M; Chang, WH; Chang, P; Lee, WC; Lai, TY; Kwo, J; Hsu, C-H; Hong, JM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2 O 3 on freshly molecular beam epitaxy grown GaAs
|
Chang, YH;Huang, ML;Chang, P;Lin, CA;Chu, YJ;Chen, BR;Hsu, CL;Kwo, J;Pi, TW;Hong, M; Chang, YH; Huang, ML; Chang, P; Lin, CA; Chu, YJ; Chen, BR; Hsu, CL; Kwo, J; Pi, TW; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)]
|
Lin, CA;Chiu, HC;Chiang, TH;Lin, TD;Chang, YH;Chang, WH;Chang, YC;Wang, W-E;Dekoster, J;Hoffmann, TY;others; Lin, CA; Chiu, HC; Chiang, TH; Lin, TD; Chang, YH; Chang, WH; Chang, YC; Wang, W-E; Dekoster, J; Hoffmann, TY; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
MBE—Enabling technology beyond Si CMOS
|
Chang, P;Lee, WC;Lin, TD;Hsu, CH;Kwo, J;Hong, M; Chang, P; Lee, WC; Lin, TD; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
High-resolution core-level photoemission study of CF ${$sub 4$}$-treated Gd ${$sub 2$}$ O ${$sub 3$}$(Ga ${$sub 2$}$ O ${$sub 3$}$) gate dielectric on Ge probed by synchrotron radiation
|
Pi, T-W;Huang, ML;Kwo, J;Lee, WC;Chu, LK;Lin, TD;Chiang, TH;Wang, YC;Wu, YD;Hong, M; Pi, T-W; Huang, ML; Kwo, J; Lee, WC; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
InGaAs and Ge MOSFETs with high $κ$ dielectrics
|
Lee, WC;Chang, P;Lin, TD;Chu, LK;Chiu, HC;Kwo, J;Hong, M; Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
H 2 S molecular beam passivation of Ge (001)
|
Merckling, C;Chang, YC;Lu, CY;Penaud, J;El-Kazzi, M;Bellenger, F;Brammertz, G;Hong, M;Kwo, J;Meuris, M;others; Merckling, C; Chang, YC; Lu, CY; Penaud, J; El-Kazzi, M; Bellenger, F; Brammertz, G; Hong, M; Kwo, J; Meuris, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2 O 3 on pristine n-GaAs (001)-4$\\times$ 6 surface
|
Chang, YH;Huang, ML;Chang, P;Shen, JY;Chen, BR;Hsu, CL;Pi, TW;Hong, Ma;Kwo, J; Chang, YH; Huang, ML; Chang, P; Shen, JY; Chen, BR; Hsu, CL; Pi, TW; Hong, Ma; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation
|
Merckling, C;Chang, YC;Lu, CY;Penaud, J;Brammertz, G;Scarrozza, M;Pourtois, G;Kwo, J;Hong, M;Dekoster, J;others; Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; Hong, M; Dekoster, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
Thermal annealing and grain boundary effects on ferromagnetism in Y2O3: Co diluted magnetic oxide nanocrystals
|
Soo, YL;Wu, TS;Wang, CS;Chang, SL;Lee, HY;Chu, PP;Chen, CY;Chou, LJ;Chan, TS;Hsieh, CA;others; Soo, YL; Wu, TS; Wang, CS; Chang, SL; Lee, HY; Chu, PP; Chen, CY; Chou, LJ; Chan, TS; Hsieh, CA; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Electronic structures of Ga2O3 (Gd2O3) gate dielectric on n-Ge (001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study
|
Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG; Wang, YC; Chiang, TH; Lin, TD; Chu, LK; Huang, ML; Lee, WC; Pi, T-W; Pi, T-W;Lee, WC;Huang, ML;Chu, LK;Lin, TD;Chiang, TH;Wang, YC;Wu, YD;Hong, M;Kwo, J |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Direct determination of flat-band voltage for metal/high $κ$ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation
|
Chang, C-L;Lee, WC;Chu, LK;Hong, M;Kwo, J;Chang, Y-M; Chang, C-L; Lee, WC; Chu, LK; Hong, M; Kwo, J; Chang, Y-M; MINGHWEI HONG |
Showing items 216-265 of 801 (17 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
View [10|25|50] records per page
|
