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Taiwan Academic Institutional Repository >
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"minghwei hong"
Showing items 261-285 of 801 (33 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T08:40:12Z |
In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2 O 3 on pristine n-GaAs (001)-4$\\times$ 6 surface
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Chang, YH;Huang, ML;Chang, P;Shen, JY;Chen, BR;Hsu, CL;Pi, TW;Hong, Ma;Kwo, J; Chang, YH; Huang, ML; Chang, P; Shen, JY; Chen, BR; Hsu, CL; Pi, TW; Hong, Ma; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation
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Merckling, C;Chang, YC;Lu, CY;Penaud, J;Brammertz, G;Scarrozza, M;Pourtois, G;Kwo, J;Hong, M;Dekoster, J;others; Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; Hong, M; Dekoster, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
Thermal annealing and grain boundary effects on ferromagnetism in Y2O3: Co diluted magnetic oxide nanocrystals
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Soo, YL;Wu, TS;Wang, CS;Chang, SL;Lee, HY;Chu, PP;Chen, CY;Chou, LJ;Chan, TS;Hsieh, CA;others; Soo, YL; Wu, TS; Wang, CS; Chang, SL; Lee, HY; Chu, PP; Chen, CY; Chou, LJ; Chan, TS; Hsieh, CA; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Electronic structures of Ga2O3 (Gd2O3) gate dielectric on n-Ge (001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study
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Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG; Wang, YC; Chiang, TH; Lin, TD; Chu, LK; Huang, ML; Lee, WC; Pi, T-W; Pi, T-W;Lee, WC;Huang, ML;Chu, LK;Lin, TD;Chiang, TH;Wang, YC;Wu, YD;Hong, M;Kwo, J |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Direct determination of flat-band voltage for metal/high $κ$ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation
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Chang, C-L;Lee, WC;Chu, LK;Hong, M;Kwo, J;Chang, Y-M; Chang, C-L; Lee, WC; Chu, LK; Hong, M; Kwo, J; Chang, Y-M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Strong crystal anisotropy of magneto-transport property in Fe 3 Si epitaxial film
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Hung, HY;Huang, SY;Chang, P;Lin, WC;Liu, YC;Lee, SF;Hong, M;Kwo, J; Hung, HY; Huang, SY; Chang, P; Lin, WC; Liu, YC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Achieving very high drain current of 1.23 mA/$μ$m in a 1-$μ$m-gate-length self-aligned inversion-channel MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3)/In 0.75 Ga 0.25 As MOSFET
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Lin, TD;Chang, P;Wu, YD;Chiu, HC;Kwo, J;Hong, M; Lin, TD; Chang, P; Wu, YD; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As
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Lin, CA;Chiu, HC;Chiang, TH;Chang, YC;Lin, TD;Kwo, J;Wang, W-E;Dekoster, J;Heyns, M;Hong, M; Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric
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Chang, WH;Chiang, TH;Wu, YD;Hong, M;Lin, CA;Kwo, J; Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Passivation of InAs and GaSb with Novel High kappa Dielectrics
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Hong, Minghwei;Kwo, J Raynien; Hong, Minghwei; Kwo, J Raynien; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Achieving a Low Interfacial Density of States with a Flat Distribution in High-$κ$ Ga2O3 (Gd2O3) Directly Deposited on Ge
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Lin, Chunan;Lin, Hanchung;Chiang, Tsunghung;Chu, Reilin;Chu, Lungkun;Lin, Tsungda;Chang, Yaochung;Wang, Wei-E;Kwo, J Raynien;Hong, Minghwei; Lin, Chunan; Lin, Hanchung; Chiang, Tsunghung; Chu, Reilin; Chu, Lungkun; Lin, Tsungda; Chang, Yaochung; Wang, Wei-E; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy
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Kwo, J; MINGHWEI HONG; Chiu, Ya-Ping;Huang, BC;Shih, MC;Shen, JY;Chang, P;Chang, CS;Huang, ML;Tsai, M-H;Hong, M;Kwo, J; Chiu, Ya-Ping; Huang, BC; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, M-H; Hong, M |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
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Chang, Pen;Chiu, Han-Chin;Lin, Tsung-Da;Huang, Mao-Lin;Chang, Wen-Hsin;Wu, Shao-Yun;Wu, Kang-Hua;Hong, Minghwei;Kwo, Jueinai; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Magnetization reversal processes of epitaxial Fe3Si films on GaAs (001)
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Liu, YC;Chang, P;Huang, SY;Chang, LJ;Lin, WC;Lee, SF;Hong, M;Kwo, J; Liu, YC; Chang, P; Huang, SY; Chang, LJ; Lin, WC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Atomic-scale evolution of interfacial electronic band alignment in epitaxial Gd2 O 3 on GaAs (100)
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Chang, CS; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG; Huang, BC;Chiu, YP;Shih, MC;Shen, JY;Chang, P;Chiang, TH;Chang, CS;Huang, ML;Hong, M;Kwo, J; Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chiang, TH |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Direct measurement of interfacial structure in epitaxial Gd 2 O 3 on GaAs (001) using scanning tunneling microscopy
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Chiang, TH; Hong, M; Kwo, J; MINGHWEI HONG; Chiu, Ya-Ping;Shih, MC;Huang, BC;Shen, JY;Huang, ML;Lee, WC;Chang, P;Chiang, TH;Hong, M;Kwo, J; Chiu, Ya-Ping; Shih, MC; Huang, BC; Shen, JY; Huang, ML; Lee, WC; Chang, P |
| 臺大學術典藏 |
2018-09-10T08:40:09Z |
利用高介電材料與三五族高電子遷移率通道材料之介面調變工程作為鈍化保護以實現超越矽互補式金氧半場效電晶體技術之研究
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Huang, Tsung-Shiew; Hong, Mingwhei; Chang, Pen; Kwo, Jueinai; 張翔筆; Huang, Tsung-Shiew; Hong, Mingwhei; Chang, Pen; Kwo, Jueinai; 張翔筆; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:09Z |
Passivation of InAs and GaSb with High $κ$ Dielectrics-Growth, Structural, Chemical and Electrical Characterization
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Hong, Minghwei;Kwo, J Raynien; Hong, Minghwei; Kwo, J Raynien; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO 2 as a gate dielectric
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Chang, YC;Chang, WH;Chang, YH;Kwo, J;Lin, YS;Hsu, SH;Hong, JM;Tsai, CC;Hong, M; Chang, YC; Chang, WH; Chang, YH; Kwo, J; Lin, YS; Hsu, SH; Hong, JM; Tsai, CC; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As
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Wu, YD;Lin, TD;Chiang, TH;Chang, YC;Chiu, HC;Lee, YJ;Hong, M;Lin, CA;Kwo, J; Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics
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Lin, TD;Chiu, HC;Chang, P;Chang, YH;Wu, YD;Hong, M;Kwo, J; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing
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Chang, YC;Merckling, C;Penaud, J;Lu, CY;Wang, WE;Dekoster, J;Meuris, M;Caymax, M;Heyns, M;Kwo, J;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
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Lin, TD;Chang, P;Chiu, HC;Hong, M;Kwo, J;Lin, YS;Hsu, Shawn SH; Lin, TD; Chang, P; Chiu, HC; Hong, M; Kwo, J; Lin, YS; Hsu, Shawn SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)
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Chang, WH;Chang, P;Lai, TY;Lee, YJ;Kwo, J;Hsu, C-H;Hong, M; Chang, WH; Chang, P; Lai, TY; Lee, YJ; Kwo, J; Hsu, C-H; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealing
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Lee, YJ;Lee, CH;Tung, LT;Chiang, TH;Lai, TY;Kwo, J;Hsu, CH;Hong, M; Lee, YJ; Lee, CH; Tung, LT; Chiang, TH; Lai, TY; Kwo, J; Hsu, CH; Hong, M; MINGHWEI HONG |
Showing items 261-285 of 801 (33 Page(s) Totally)
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View [10|25|50] records per page
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