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Showing items 581-590 of 801  (81 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T05:21:14Z Thin single-crystal Sc 2 O 3 films epitaxially grown on Si (111)—structure and electrical properties Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; Chen, CP; Hong, M; Kwo, J; Cheng, HM; Huang, YL; Lin, SY; Chi, J; Lee, HY; Hsieh, YF; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:13Z Thin single crystal Sc2O3 Films on Si (111) with very sharp interface Hong, M; Lee, HY; Kortan, AR; Kwo, J; Hong, M; Lee, HY; Kortan, AR; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:13Z Microstructures of Thin Sputtered Amorphous Tb sub 0. 26 Fe sub 0. 74 and Polycrystalline Iron Films Nakahara, S;Hong, M;van Dover, RB;Gyorgy, EM;Bacon, DD; Nakahara, S; Hong, M; van Dover, RB; Gyorgy, EM; Bacon, DD; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:13Z Growth rate effects on InGaAs/GaAs quantum dots Huang, CY; Ou, TM; Chang, WT; Wu, MC; Shen, JJ; Liang, CY; Lin, SY; Chang, P; Lin, TD; Hong, M; others; Huang, CY; Ou, TM; Chang, WT; Wu, MC; Shen, JJ; Liang, CY; Lin, SY; Chang, P; Lin, TD; Hong, M; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:13Z Papers from the 22nd North American Conference on Molecular Beam Epitaxy-Oxides-Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:13Z Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wells Chua, CL;Zhu, ZH;Lo, YH;Hong, M;Bhat, R; Chua, CL; Zhu, ZH; Lo, YH; Hong, M; Bhat, R; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:13Z Depletion-mode InGaAs/GaAs MOSFET with Oxide Passivated by Amorphous Si Tsai, PJ; Chiu, UN; Chu, LK; Chen, YW; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; Tsai, PJ; Chiu, UN; Chu, LK; Chen, YW; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:13Z Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs Mills Jr, AP; Hong, M; Mannaerts, JP; Pfeiffer, LN; West, KW; Martin, S; Ruel, RR; Baldwin, KW; Rowe, JE; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:12Z In-situ Ga 2 O 3 process for GaAs inversion/accumulation device and surface passivation applications Passlack, Matthias;Hong, Minghwei;Mannaerts, Joseph P;Chu, SNG;Opila, Robert L;Moriya, Netzer; Passlack, Matthias; Hong, Minghwei; Mannaerts, Joseph P; Chu, SNG; Opila, Robert L; Moriya, Netzer; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:12Z Reactive diffusion and superconductivity of Nb3Al multilayer films V;enberg, JM;Hong, M;Hamm, RA;Gurvitch, M; V; enberg, JM; Hong, M; Hamm, RA; Gurvitch, M; MINGHWEI HONG

Showing items 581-590 of 801  (81 Page(s) Totally)
<< < 54 55 56 57 58 59 60 61 62 63 > >>
View [10|25|50] records per page