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"minghwei hong"的相關文件
顯示項目 6-15 / 801 (共81頁)
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| 臺大學術典藏 |
2021-10-21T23:27:52Z |
Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxially Grown on Ge
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Cheng, Yi Ting; Wan, Hsien Wen; Chu, Tien Yu; Pi, Tun Wen; Kwo, Jueinai; MINGHWEI HONG |
| 臺大學術典藏 |
2021-09-21T23:19:57Z |
Oxidation and hydrogenation of SiGe(0 0 1)-2 × 1 at room temperature and in situ annealing: A synchrotron radiation photoemission study
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Cheng, Yi Ting; Wan, Hsien Wen; Kwo, Jueinai; MINGHWEI HONG; Pi, Tun Wen |
| 臺大學術典藏 |
2019-12-27T07:49:59Z |
Magneto-optical study of uranium additions to amorphous Tb xFe1-x
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Albiston, S.D.; MINGHWEI HONG; Gyorgy, E.M.; Van Dover, R.B.; Hong, M.; J.F.; Dillon Jr.; Dillon Jr.;J.F.;Van Dover, R.B.;Hong, M.;Gyorgy, E.M.;Albiston, S.D. |
| 臺大學術典藏 |
2019-12-27T07:49:59Z |
Metallic Multilayers and Epitaxy
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Hong, M.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Novel Ga 2 O 3 (Gd 2 O 3 ) passivation techniques to produce low D it oxide-GaAs interfaces
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Hong, M.; Mannaerts, J.P.; Bower, J.E.; Kwo, J.; Passlack, M.; Hwang, W.-Y.; Tu, L.W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide
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Ren, F.; Hong, M.; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; Opila, R.L.; Ren, F.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Observation of inversion layers at GA2O3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
C-V and G-V characterization of in-situ fabricated Ga2O3-GaAs interfaces for inversion/accumulation device and surface passivation applications
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
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