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Taiwan Academic Institutional Repository >
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"minghwei hong"
Showing items 121-130 of 801 (81 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:31Z |
Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric
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Kwo, J.; Lin, Y.S.; Hsu, S.H.; Hong, J.M.; Tsai, C.C.; Hong, M.; MINGHWEI HONG; Chang, W.H.; Chang, Y.H.; Chang, Y.C.; Chang, Y.C.;Chang, W.H.;Chang, Y.H.;Kwo, J.;Lin, Y.S.;Hsu, S.H.;Hong, J.M.;Tsai, C.C.;Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:30Z |
Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga2 O3 (Gd2 O3) passivation (Applied Physics Letters (2011) 98 (062108))
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Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG; Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Lin, T.D.;Chang, Y.H.;Chang, W.H.;Chang, Y.C.;Wang, W.-E.;Dekoster, J.;Hoffmann, T.Y.;Hong, M.;Kwo, J.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E. |
| 臺大學術典藏 |
2019-12-27T07:49:30Z |
High-resolution core-level photoemission study of CF 4 -treated Gd 2 O 3 (Ga 2 O 3 ) gate dielectric on Ge probed by synchrotron radiation
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Pi, T.-W.;Huang, M.L.;Lee, W.C.;Chu, L.K.;Lin, T.D.;Chiang, T.H.;Wang, Y.C.;Wu, Y.D.;Hong, M.;Kwo, J.; Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:30Z |
Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8 As by Ga2O3(Gd 2O3) passivation
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Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Lin, T.D.;Chang, Y.H.;Chang, W.H.;Chang, Y.C.;Wang, W.-E.;Dekoster, J.;Hoffmann, T.Y.;Hong, M.;Kow, J.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:30Z |
Thermal annealing and grain boundary effects on ferromagnetism in Y 2 O 3 :Co diluted magnetic oxide nanocrystals
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Soo, Y.L.;Wu, T.S.;Wang, C.S.;Chang, S.L.;Lee, H.Y.;Chu, P.P.;Chen, C.Y.;Chou, L.J.;Chan, T.S.;Hsieh, C.A.;Lee, J.F.;Kwo, J.;Hong, M.; Soo, Y.L.; Wu, T.S.; Wang, C.S.; Chang, S.L.; Lee, H.Y.; Chu, P.P.; Chen, C.Y.; Chou, L.J.; Chan, T.S.; Hsieh, C.A.; Lee, J.F.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
Direct determination of flat-band voltage for metal/high 庥 oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation
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Chang, Y.-M.; MINGHWEI HONG; Kwo, J.; Hong, M.; Chu, L.K.; Chang, C.-L.;Lee, W.C.;Chu, L.K.;Hong, M.;Kwo, J.;Chang, Y.-M.; Chang, C.-L.; Lee, W.C. |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
InGaAs and Ge MOSFETs with high 庥 dielectrics
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Lee, W.C.;Chang, P.;Lin, T.D.;Chu, L.K.;Chiu, H.C.;Kwo, J.;Hong, M.; Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)
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Liu, Y.C.;Chang, P.;Huang, S.Y.;Chang, L.J.;Lin, W.C.;Lee, S.F.;Hong, M.;Kwo, J.; Liu, Y.C.; Chang, P.; Huang, S.Y.; Chang, L.J.; Lin, W.C.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs
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Chang, Y.H.;Huang, M.L.;Chang, P.;Lin, C.A.;Chu, Y.J.;Chen, B.R.;Hsu, C.L.;Kwo, J.;Pi, T.W.;Hong, M.; Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
H2S molecular beam passivation of Ge(0 0 1)
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Merckling, C.;Chang, Y.C.;Lu, C.Y.;Penaud, J.;El-Kazzi, M.;Bellenger, F.;Brammertz, G.;Hong, M.;Kwo, J.;Meuris, M.;Dekoster, J.;Heyns, M.M.;Caymax, M.; Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M.M.; Caymax, M.; MINGHWEI HONG |
Showing items 121-130 of 801 (81 Page(s) Totally)
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