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Showing items 161-170 of 801  (81 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2019-12-27T07:49:21Z Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4 ? 6 and As-rich GaAs(001)-2 ? 4 surfaces: A synchrotron radiation photoemission study Pi, T.-W.;Lin, H.-Y.;Liu, Y.-T.;Lin, T.-D.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.-W.; Lin, H.-Y.; Liu, Y.-T.; Lin, T.-D.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:20Z Greatly improved interfacial passivation of in-situ high 庥 dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100) Chu, R.L.;Liu, Y.C.;Lee, W.C.;Lin, T.D.;Huang, M.L.;Pi, T.W.;Kwo, J.;Hong, M.; Chu, R.L.; Liu, Y.C.; Lee, W.C.; Lin, T.D.; Huang, M.L.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:20Z Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 ? 2 from atomic layer deposition Pi, T.W.;Lin, T.D.;Lin, H.Y.;Chang, Y.C.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, T.D.; Lin, H.Y.; Chang, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:20Z III-V compound semiconductor transistors - From planar to nanowire structures Riel, H.;Wernersson, L.-E.;Hong, M.;Del Alamo, J.A.; Riel, H.; Wernersson, L.-E.; Hong, M.; Del Alamo, J.A.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:20Z High 庥/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited) Chang, W.H.;Lin, T.D.;Liao, M.H.;Pi, T.W.;Kwo, J.;Hong, M.; Chang, W.H.; Lin, T.D.; Liao, M.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:19Z Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs(111)A-2?2 from atomic layer deposition Fanchiang, Y.-T.;Chiang, T.-H.;Pi, T.-W.;Wertheim, G.K.;Kwo, J.R.;Hong, M.; Fanchiang, Y.-T.; Chiang, T.-H.; Pi, T.-W.; Wertheim, G.K.; Kwo, J.R.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:19Z Single-Crystal Y 2 O 3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition Lin, Y.H.;Cheng, C.K.;Chen, K.H.;Fu, C.H.;Chang, T.W.;Hsu, C.H.;Kwo, J.;Hong, M.; Lin, Y.H.; Cheng, C.K.; Chen, K.H.; Fu, C.H.; Chang, T.W.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:19Z Passivation of GaSb using molecular beam epitaxy Y 2 O 3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors Chu, R.L.;Chiang, T.H.;Hsueh, W.J.;Chen, K.H.;Lin, K.Y.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:19Z Observation of strongly enhanced inverse spin Hall voltage in Fe 3 Si/GaAs structures Hung, H.Y.;Chiang, T.H.;Syu, B.Z.;Fanchiang, Y.T.;Lin, J.G.;Lee, S.F.;Hong, M.;Kwo, J.; Hung, H.Y.; Chiang, T.H.; Syu, B.Z.; Fanchiang, Y.T.; Lin, J.G.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:19Z Single crystal Gd2O3 epitaxially on GaAs(111)A Chiang, T.-H.;Wu, S.-Y.;Huang, T.-S.;Hsu, C.-H.;Kwo, J.;Hong, M.; Chiang, T.-H.; Wu, S.-Y.; Huang, T.-S.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG

Showing items 161-170 of 801  (81 Page(s) Totally)
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