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Showing items 166-190 of 801 (33 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs(111)A-2?2 from atomic layer deposition
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Fanchiang, Y.-T.;Chiang, T.-H.;Pi, T.-W.;Wertheim, G.K.;Kwo, J.R.;Hong, M.; Fanchiang, Y.-T.; Chiang, T.-H.; Pi, T.-W.; Wertheim, G.K.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Single-Crystal Y 2 O 3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition
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Lin, Y.H.;Cheng, C.K.;Chen, K.H.;Fu, C.H.;Chang, T.W.;Hsu, C.H.;Kwo, J.;Hong, M.; Lin, Y.H.; Cheng, C.K.; Chen, K.H.; Fu, C.H.; Chang, T.W.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Passivation of GaSb using molecular beam epitaxy Y 2 O 3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
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Chu, R.L.;Chiang, T.H.;Hsueh, W.J.;Chen, K.H.;Lin, K.Y.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Observation of strongly enhanced inverse spin Hall voltage in Fe 3 Si/GaAs structures
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Hung, H.Y.;Chiang, T.H.;Syu, B.Z.;Fanchiang, Y.T.;Lin, J.G.;Lee, S.F.;Hong, M.;Kwo, J.; Hung, H.Y.; Chiang, T.H.; Syu, B.Z.; Fanchiang, Y.T.; Lin, J.G.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Single crystal Gd2O3 epitaxially on GaAs(111)A
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Chiang, T.-H.;Wu, S.-Y.;Huang, T.-S.;Hsu, C.-H.;Kwo, J.;Hong, M.; Chiang, T.-H.; Wu, S.-Y.; Huang, T.-S.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Single-crystal atomic layer deposited Y<inf>2</inf>O<inf>3</inf> on GaAs(0 0 1) - Growth, structural, and electrical characterization
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Wu, S.Y.;Chen, K.H.;Lin, Y.H.;Cheng, C.K.;Hsu, C.H.;Kwo, J.;Hong, M.; Wu, S.Y.; Chen, K.H.; Lin, Y.H.; Cheng, C.K.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Epitaxial ferromagnetic Fe<inf>3</inf>Si on GaAs(111)A with atomically smooth surface and interface
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Liu, Y.C.;Chen, Y.W.;Tseng, S.C.;Chang, M.T.;Lo, S.C.;Lin, Y.H.;Cheng, C.K.;Hung, H.Y.;Hsu, C.H.;Kwo, J.;Hong, M.; Liu, Y.C.; Chen, Y.W.; Tseng, S.C.; Chang, M.T.; Lo, S.C.; Lin, Y.H.; Cheng, C.K.; Hung, H.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process
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Fu, C.H.;Lin, Y.H.;Lee, W.C.;Lin, T.D.;Chu, R.L.;Chu, L.K.;Chang, P.;Chen, M.H.;Hsueh, W.J.;Chen, S.H.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structures
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Pi, T.W.;Lin, Y.H.;Fanchiang, Y.T.;Chiang, T.H.;Wei, C.H.;Lin, Y.C.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:17Z |
Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y 2 O 3 /n-GaAs(001)
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Lin, Y.-H.;Fu, C.-H.;Lin, K.-Y.;Chen, K.-H.;Chang, T.-W.;Raynien Kwo, J.;Hong, M.; Lin, Y.-H.; Fu, C.-H.; Lin, K.-Y.; Chen, K.-H.; Chang, T.-W.; Raynien Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:17Z |
Coherent acoustic phonon oscillation accompanied with backward acoustic pulse below exciton resonance in a ZnO epifilm on oxide-buffered Si(1 1 1)
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Lin, J.-H.;Shen, Y.-K.;Liu, W.-R.;Lu, C.-H.;Chen, Y.-H.;Chang, C.-P.;Lee, W.-C.;Hong, M.;Kwo, J.-R.;Hsu, C.-H.;Hsieh, W.-F.; Lin, J.-H.; Shen, Y.-K.; Liu, W.-R.; Lu, C.-H.; Chen, Y.-H.; Chang, C.-P.; Lee, W.-C.; Hong, M.; Kwo, J.-R.; Hsu, C.-H.; Hsieh, W.-F.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:17Z |
Demonstration of large field effect in topological insulator films via a high-庥 back gate
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Wang, C.Y.;Lin, H.Y.;Yang, S.R.;Chen, K.H.M.;Lin, Y.H.;Chen, K.H.;Young, L.B.;Cheng, C.K.;Fanchiang, Y.T.;Tseng, S.C.;Hong, M.;Kwo, J.; Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition
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Cheng, C.K.;Young, L.B.;Lin, K.Y.;Lin, Y.H.;Wan, H.W.;Lu, G.J.;Chang, M.T.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Hsu, C.H.;Kwo, J.;Hong, M.; Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge
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Hsueh, W.-J.; Chiu, P.-C.; Hong, M.-H.; Chyi, J.-I.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance
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Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission study
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Cheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
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Young, L.B.;Cheng, C.-K.;Lu, G.-J.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Li, M.-Y.;Cai, R.-F.;Lo, S.-C.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2
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Chen, K.H.M.; Lin, H.Y.; Yang, S.R.; Cheng, C.K.; Zhang, X.Q.; Cheng, C.M.; Lee, S.F.; Hsu, C.H.; Lee, Y.H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Surface electronic structure of epi germanium (001)-2 ? 1
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Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study
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Chang, T.W.; Lin, K.Y.; Lin, Y.H.; Young, L.B.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface
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Wan, H.W.; Lin, Y.H.; Lin, K.Y.; Chang, T.W.; Cai, R.F.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y 2 O 3 /Al 2 O 3 on GaAs(001)
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Lin, K.Y.;Young, L.B.;Cheng, C.K.;Chen, K.H.;Lin, Y.H.;Wan, H.W.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Kwo, J.;Hong, M.; Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
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Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 ??In comparison with atomic layer deposited Al2O3
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Wan, H.W.;Lin, K.Y.;Cheng, C.K.;Su, Y.K.;Lee, W.C.;Hsu, C.H.;Pi, T.W.;Kwo, J.;Hong, M.; Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
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Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG |
Showing items 166-190 of 801 (33 Page(s) Totally)
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