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"minghwei hong"
Showing items 186-235 of 801 (17 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface
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Wan, H.W.; Lin, Y.H.; Lin, K.Y.; Chang, T.W.; Cai, R.F.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y 2 O 3 /Al 2 O 3 on GaAs(001)
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Lin, K.Y.;Young, L.B.;Cheng, C.K.;Chen, K.H.;Lin, Y.H.;Wan, H.W.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Kwo, J.;Hong, M.; Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
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Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 ??In comparison with atomic layer deposited Al2O3
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Wan, H.W.;Lin, K.Y.;Cheng, C.K.;Su, Y.K.;Lee, W.C.;Hsu, C.H.;Pi, T.W.;Kwo, J.;Hong, M.; Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
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Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:13Z |
High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering
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Wu, C.N.;Tseng, C.C.;Lin, K.Y.;Cheng, C.K.;Yeh, S.L.;Fanchiang, Y.T.;Hong, M.;Kwo, J.; Wu, C.N.; Tseng, C.C.; Lin, K.Y.; Cheng, C.K.; Yeh, S.L.; Fanchiang, Y.T.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:12Z |
Topological insulator Bi 2 Se 3 films on rare earth iron garnets and their high-quality interfaces
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Chen, C.C.;Chen, K.H.M.;Fanchiang, Y.T.;Tseng, C.C.;Yang, S.R.;Wu, C.N.;Guo, M.X.;Cheng, C.K.;Huang, S.W.;Lin, K.Y.;Wu, C.T.;Hong, M.;Kwo, J.; Chen, C.C.; Chen, K.H.M.; Fanchiang, Y.T.; Tseng, C.C.; Yang, S.R.; Wu, C.N.; Guo, M.X.; Cheng, C.K.; Huang, S.W.; Lin, K.Y.; Wu, C.T.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:11Z |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
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MINGHWEI HONG; Hong, M.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Lin, K.Y.;Wan, H.W.;Chen, K.H.M.;Fanchiang, Y.T.;Chen, W.S.;Lin, Y.H.;Cheng, Y.T.;Chen, C.C.;Lin, H.Y.;Young, L.B.;Cheng, C.P.;Pi, T.W.;Kwo, J.;Hong, M.; Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B. |
| 臺大學術典藏 |
2018-09-10T15:32:24Z |
Detection of topological surface states by spin pumping at room temperature
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Fanchiang, YT;Cheng, CK;Hong, M;Lin, HY;Chen, KH;Yang, SR;Wu, CN;Kwo, J;Lee, SF; Fanchiang, YT; Cheng, CK; Hong, M; Lin, HY; Chen, KH; Yang, SR; Wu, CN; Kwo, J; Lee, SF; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:32:24Z |
High quality topological insulator thin films grown by molecular beam epitaxy using MoS2 monolayer as buffer layer
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Chen, KH;Lin, HY;Wang, CY;Yang, SR;Kwo, J;Cheng, CK;Hong, M;Zhang, XQ;Lee, YH; Chen, KH; Lin, HY; Wang, CY; Yang, SR; Kwo, J; Cheng, CK; Hong, M; Zhang, XQ; Lee, YH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping
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Wu, CN;Lin, YH;Fanchiang, YT;Hung, HY;Lin, HY;Lin, PH;Lin, JG;Lee, SF;Hong, M;Kwo, J; Wu, CN; Lin, YH; Fanchiang, YT; Hung, HY; Lin, HY; Lin, PH; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process
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Fu, CH;Lin, YH;Lee, WC;Lin, TD;Chu, RL;Chu, LK;Chang, P;Chen, MH;Hsueh, WJ;Chen, SH;others; Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In) GaAs surfaces: electronic and electric structures
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Pi, TW;Lin, YH;Fanchiang, YT;Chiang, TH;Wei, CH;Lin, YC;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, YH; Fanchiang, YT; Chiang, TH; Wei, CH; Lin, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Single-crystal atomic layer deposited Y 2 O 3 on GaAs (001)-growth, structural, and electrical characterization
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Wu, SY;Chen, KH;Lin, YH;Cheng, CK;Hsu, CH;Kwo, J;Hong, M; Wu, SY; Chen, KH; Lin, YH; Cheng, CK; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Investigation of the transport properties of Bi2 Se3 films grown on various substrates
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Lin, HY;Wang, CY;Chen, KHM;Lin, YH;Chen, KH;Yang, BY;Hong, M;Kwo, J; Lin, HY; Wang, CY; Chen, KHM; Lin, YH; Chen, KH; Yang, BY; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Demonstration of large field effect in topological insulator films via a high-kappa back gate
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Wang, CY;Lin, HY;Lin, YH;Chen, KH;Yang, BY;Chen, KHM;Peng, ZJ;Lee, SF;Hong, M;Kwo, J; Wang, CY; Lin, HY; Lin, YH; Chen, KH; Yang, BY; Chen, KHM; Peng, ZJ; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interface
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Chu, Jui-Lin;Hong, Ming-Hwei;Kwo, Juei-Nai;Pi, Tun-Wen;Chyi, Jen-Inn; Chu, Jui-Lin; Hong, Ming-Hwei; Kwo, Juei-Nai; Pi, Tun-Wen; Chyi, Jen-Inn; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs (111) A-2$\\times$ 2 from atomic layer deposition
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Fanchiang, Yu-Ting;Chiang, Tsung-Hung;Pi, Tun-Wen;Wertheim, Gunther K;Kwo, J Raynien;Hong, Minghwei; Fanchiang, Yu-Ting; Chiang, Tsung-Hung; Pi, Tun-Wen; Wertheim, Gunther K; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Epitaxial ferromagnetic Fe3Si on GaAs (111) A with atomically smooth surface and interface
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Liu, YC; Chen, YW; Tseng, SC; Chang, MT; Lo, SC; Lin, YH; Cheng, CK; Hung, HY; Hsu, CH; Kwo, J; others; MINGHWEI HONG; Liu, YC;Chen, YW;Tseng, SC;Chang, MT;Lo, SC;Lin, YH;Cheng, CK;Hung, HY;Hsu, CH;Kwo, J;others |
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Single-Crystal Y2O3 Epitaxially on GaAs (001) and (111) Using Atomic Layer Deposition
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Lin, YH;Cheng, CK;Chen, KH;Fu, CH;Chang, TW;Hsu, CH;Kwo, J;Hong, M; Lin, YH; Cheng, CK; Chen, KH; Fu, CH; Chang, TW; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0. 53Ga0. 47As (001)-4$\\times$ 2 from atomic layer deposition
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Pi, TW;Lin, TD;Lin, HY;Chang, YC;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, TD; Lin, HY; Chang, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Investigation of Spin Pumping in Fe3Si/GaAs and Fe3Si/Bi2Se3 Bilayer Structure
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Hung, Hung-Yi;Lin, Hsiao-Yu;Kwo, Jueinai;Chiang, Tsung-Hung;Lin, Jauyn G;Lee, Shang Fan;Syu, Bei Zhen;Hong, Minghwei; Hung, Hung-Yi; Lin, Hsiao-Yu; Kwo, Jueinai; Chiang, Tsung-Hung; Lin, Jauyn G; Lee, Shang Fan; Syu, Bei Zhen; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Pushing the Material Limits in High Kappa Dielectrics on High Carrier Mobility Semiconductors for Science/Technology Beyond Si CMOS and More
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Hong, Minghwei;Kwo, JR; Hong, Minghwei; Kwo, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Method and system for manufacturing semiconductor device
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Hong, Ming-Hwei;Kwo, Ray-Nien;Pi, Tun-Wen;Huang, Mao-Lin;Chang, Yu-Hsing;Chang, Pen;Lin, Chun-An;Lin, Tsung-Da; Hong, Ming-Hwei; Kwo, Ray-Nien; Pi, Tun-Wen; Huang, Mao-Lin; Chang, Yu-Hsing; Chang, Pen; Lin, Chun-An; Lin, Tsung-Da; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
(Invited) High $κ$/InGaAs for Ultimate CMOS-Interfacial Passivation, Low Ohmic Contacts, and Device Performance
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Chang, WH;Lin, TD;Liao, Min-Han;Pi, TW;Kwo, J Raynien;Hong, Minghwei; Chang, WH; Lin, TD; Liao, Min-Han; Pi, TW; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures
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Kwo, J; MINGHWEI HONG; Hung, HY;Chiang, TH;Syu, BZ;Fanchiang, YT;Lin, JG;Lee, SF;Hong, M;Kwo, J; Hung, HY; Chiang, TH; Syu, BZ; Fanchiang, YT; Lin, JG; Lee, SF; Hong, M |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Single crystal Gd 2 O 3 epitaxially on GaAs (111) A
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Chiang, Tsung-Hung;Wu, Shao-Yun;Huang, Tsung-Shiew;Hsu, Chia-Hung;Kwo, Jueinai;Hong, Minghwei; Chiang, Tsung-Hung; Wu, Shao-Yun; Huang, Tsung-Shiew; Hsu, Chia-Hung; Kwo, Jueinai; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
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MINGHWEI HONG; Hong, M; Kwo, J; Chyi, JI; Brown, GJ; Lin, KY; Chen, KH; Hsueh, WJ; Chiang, TH; Chu, RL; Chu, RL;Chiang, TH;Hsueh, WJ;Chen, KH;Lin, KY;Brown, GJ;Chyi, JI;Kwo, J;Hong, M |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Greatly improved interfacial passivation of in-situ high $κ$ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge (100)
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Chu, RL;Liu, YC;Lee, WC;Lin, TD;Huang, ML;Pi, TW;Kwo, J;Hong, M; Chu, RL; Liu, YC; Lee, WC; Lin, TD; Huang, ML; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
III-V compound semiconductor transistors—from planar to nanowire structures
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Riel, Heike;Wernersson, Lars-Erik;Hong, Minghwei;del Alamo, Jes{\\'u; Riel, Heike; Wernersson, Lars-Erik; Hong, Minghwei; del Alamo, Jes{\\'u; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Semiconductor-insulator Interfaces, High $κ$ Dielectrics on (In) GaAs
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Pi, TW;Lin, TD;Chang, WH;Chang, YC;Hong, M;Kwo, J; Pi, TW; Lin, TD; Chang, WH; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:27Z |
MOS Devices with Ultra-High Dielectric Constants and Methods of Forming the Same
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Liao, Ming-Han;Hong, Minghwei; Liao, Ming-Han; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Interfacial electronic structure of trimethyl-aluminum and water on an In0. 20Ga0. 80As (001)-4$\\times$ 2 surface: A high-resolution core-level photoemission study
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Pi, TW;Lin, HY;Chiang, TH;Liu, YT;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, HY; Chiang, TH; Liu, YT; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2
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MINGHWEI HONG; Hong, M; Kwo, J; Chen, Min-Cheng; Lee, MY; Hong, PF; Chang, YC; Chang, YH; Lin, TD;Chang, WH;Chu, RL;Chang, YC;Chang, YH;Lee, MY;Hong, PF;Chen, Min-Cheng;Kwo, J;Hong, M; Lin, TD; Chang, WH; Chu, RL |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Inversion-channel GaAs (100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces
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Chang, YC;Chang, WH;Merckling, C;Kwo, J;Hong, M; Chang, YC; Chang, WH; Merckling, C; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Surface Passivation of GaSb (100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative Study
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others; MINGHWEI HONG; Chu, Rei-Lin;Hsueh, Wei-Jen;Chiang, Tsung-Hung;Lee, Wei-Chin;Lin, Hsiao-Yu;Lin, Tsung-Da;Brown, Gail J;Chyi, Jen-Inn;Huang, Tsung-Shiew;Pi, Tun-Wen;others; Chu, Rei-Lin; Hsueh, Wei-Jen; Chiang, Tsung-Hung; Lee, Wei-Chin; Lin, Hsiao-Yu; Lin, Tsung-Da; Brown, Gail J; Chyi, Jen-Inn; Huang, Tsung-Shiew; Pi, Tun-Wen |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y 2 O 3-buffered Si (111)
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Kuo, CC;Liu, W-R;Lin, BH;Hsieh, WF;Hsu, C-H;Lee, WC;Hong, M;Kwo, J; Kuo, CC; Liu, W-R; Lin, BH; Hsieh, WF; Hsu, C-H; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Phase Transformation of Molecular Beam Epitaxy-Grown Nanometer-Thick Gd2O3 and Y2O3 on GaN
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Chang, Wen-Hsin;Wu, Shao-Yun;Lee, Chih-Hsun;Lai, Te-Yang;Lee, Yi-Jun;Chang, Pen;Hsu, Chia-Hung;Huang, Tsung-Shiew;Kwo, J Raynien;Hong, Minghwei; Chang, Wen-Hsin; Wu, Shao-Yun; Lee, Chih-Hsun; Lai, Te-Yang; Lee, Yi-Jun; Chang, Pen; Hsu, Chia-Hung; Huang, Tsung-Shiew; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4$\\times$ 6 and As-rich GaAs (001)-2$\\times$ 4 surfaces: a synchrotron radiation photoemission study
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Pi, Tun-Wen;Lin, Hsiao-Yu;Liu, Ya-Ting;Lin, Tsung-Da;Wertheim, Gunther K;Kwo, Jueinai;Hong, Minghwei; Pi, Tun-Wen; Lin, Hsiao-Yu; Liu, Ya-Ting; Lin, Tsung-Da; Wertheim, Gunther K; Kwo, Jueinai; Hong, Minghwei; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition
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Chiang, TH; Liu, YT; Chang, YC; Lin, TD; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG; Pi, TW;Lin, HY;Chiang, TH;Liu, YT;Chang, YC;Lin, TD;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, HY |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe3Si films with normal metals Au and Pt
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Hung, HY;Luo, GY;Chiu, YC;Chang, P;Lee, WC;Lin, JG;Lee, SF;Hong, M;Kwo, J; Hung, HY; Luo, GY; Chiu, YC; Chang, P; Lee, WC; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
Mapping the band profile across the Gd2O3/GaAs (100) hetero-interface by using scanning tunneling microscopy
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Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, MH; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
TL-BASED SUPERCONDUCTING FILMS BY SPUTTERING USING ASINGLE TARGET
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Kwo, J; Bacon, DD; MINGHWEI HONG; Hong, M;Kortan, AR;Kwo, J;Bacon, DD; Hong, M; Kortan, AR |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
$\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ As
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Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
PROPERTIES OF IN-SITU SUPERCONDUCTING Y1Ba2Cu2O7 x FILMS BY
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Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)
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Liu, W-R; Lin, BH; Kuo, CC; Lee, WC; Hong, M; Kwo, J; Hsu, C-H; Hsieh, WF; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
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Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a $γ$-Al 2 O 3 buffer layer
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Liu, W-R; Lin, BH; Yang, S; Kuo, CC; Li, Y-H; Hsu, C-H; Hsieh, WF; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Correlation between oxygen vacancies and magnetism in Mn-doped Y2O3 nanocrystals investigated by defect engineering techniques
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Wu, TS; Chen, YC; Shiu, YF; Peng, HJ; Chang, SL; Lee, HY; Chu, PP; Hsu, CW; Chou, LJ; Pao, CW; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films
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Wu, CN; Huang, SY; Lee, WC; Chang, YH; Wu, TS; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG |
Showing items 186-235 of 801 (17 Page(s) Totally)
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