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"minghwei hong"的相關文件
顯示項目 21-70 / 801 (共17頁)
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| 臺大學術典藏 |
2019-12-27T07:49:56Z |
Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis
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Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Kwo, J.; Tsai, H.S.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
Passivation of GaAs using (Ga2O3)1 - x(Gd2O3)x, 0?x?1.0 films
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Kwo, J.; Murphy, D.W.; Hong, M.; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
GaN metal oxide semiconductor field effect transistors
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Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Schurman, M.J.; Lothian, J.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
Ga 2 O 3 (Gd 2 O 3 )/GaAs power MOSFETs
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Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Tsai, H.S.; Kwo, J.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
New phase formation of Gd2O3films on GaAs(100)
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Kortan, A.R.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Kopylov, N.; Steiner, C.; Bolliger, B.; Erbudak, M.; MINGHWEI HONG; Kortan, A.R.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Krajewski, J.J.;Kopylov, N.;Steiner, C.;Bolliger, B.;Erbudak, M. |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density
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Lay, T.S.;Liu, W.D.;Hong, M.;Kwo, J.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
Properties of high 庥 gate dielectrics Gd2O3 and Y2O3 for Si
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Rosamilia, J.M.; MINGHWEI HONG; Krautter, H.W.; Sergnt, A.M.; Krajewski, J.J.; Boone, T.; Lay, T.S.; Mannaerts, J.P.; Sapjeta, B.J.; Muller, D.A.; Chu, S.N.G.; Opila, R.L.; Chabal, Y.J.; Queeney, K.L.; Hong, M.; Kortan, A.R.; Kwo, J.; Kwo, J.;Hong, M.;Kortan, A.R.;Queeney, K.L.;Chabal, Y.J.;Opila, R.L.;Muller, D.A.;Chu, S.N.G.;Sapjeta, B.J.;Lay, T.S.;Mannaerts, J.P.;Boone, T.;Krautter, H.W.;Krajewski, J.J.;Sergnt, A.M.;Rosamilia, J.M. |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy
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Lay, T.S.;Huang, K.H.;Hung, W.H.;Hong, M.;Kwo, J.;Mannaerts, J.P.; Lay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing
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Lay, T.S.;Liu, W.D.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Structure of Gd2O3 films epitaxially grown on GaAs(100) and GaN(0001) surfaces
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Fl?ckiger, T.;Erbudak, M.;Hensch, A.;Weisskopf, Y.;Hong, M.;Kortan, A.R.; Fl?ckiger, T.; Erbudak, M.; Hensch, A.; Weisskopf, Y.; Hong, M.; Kortan, A.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric
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Ng, K.; Bude, J.; MINGHWEI HONG; Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces
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Lay, T.S.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Hung, W.H.;Huang, D.J.; Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:51Z |
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric
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Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:51Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
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Ye, P.D.;Wilk, G.D.;Kwo, J.;Yang, B.;Gossmann, H.-J.L.;Frei, M.;Chu, S.N.G.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.K.;Bude, J.; Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:51Z |
Advances in high 庥 gate dielectrics for Si and III-V semiconductors
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Kwo, J.;Hong, M.;Busch, B.;Muller, D.A.;Chabal, Y.J.;Kortan, A.R.;Mannaerts, J.P.;Yang, B.;Ye, P.;Gossmann, H.;Sergent, A.M.;Ng, K.K.;Bude, J.;Schulte, W.H.;Garfunkel, E.;Gustafsson, T.; Kwo, J.; Hong, M.; Busch, B.; Muller, D.A.; Chabal, Y.J.; Kortan, A.R.; Mannaerts, J.P.; Yang, B.; Ye, P.; Gossmann, H.; Sergent, A.M.; Ng, K.K.; Bude, J.; Schulte, W.H.; Garfunkel, E.; Gustafsson, T.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy
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MINGHWEI HONG; Mannaerts, J.P.; Kwo, J.; Hung, W.H.; Hong, M.; Liao, Y.Y.; Lay, T.S.; Mannaerts, J.P.; Kwo, J.; Hong, M.; Hung, W.H.; Lay, T.S.; Liao, Y.Y. |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
Thin single-crystal Sc2O3 films epitaxially grown on Si (1 1 1) - Structure and electrical properties
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Chen, C.P.; Hong, M.; Kwo, J.; Cheng, H.M.; Huang, Y.L.; Lin, S.Y.; Chi, J.; Lee, H.Y.; Hsieh, Y.F.; Mannaerts, J.P.; Chen, C.P.; Hong, M.; Kwo, J.; Cheng, H.M.; Huang, Y.L.; Lin, S.Y.; Chi, J.; Lee, H.Y.; Hsieh, Y.F.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
MBE-grown high 庥 gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics
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Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition
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Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor
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Lay, T.S.;Liao, Y.Y.;Liu, W.D.;Lai, Y.H.;Hung, W.H.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liao, Y.Y.; Liu, W.D.; Lai, Y.H.; Hung, W.H.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:49Z |
High-quality thin single-crystal 帠-Al 2 O 3 films grown on Si (111)
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Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:49Z |
Thermodynamic stability of Ga 2 O 3 (Gd 2 O 3 ) GaAs interface
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Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:48Z |
Measuring interface strains at the atomic resolution in depth using x-ray Bragg-surface diffraction
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Sun, W.C.; Chang, H.C.; Wu, B.K.; Chen, Y.R.; Chu, C.H.; Chang, S.L.; Hong, M.; Tang, M.T.; Stetsko, Y.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:48Z |
Structure of Sc 2O 3 films epitaxially grown on 帢-Al 2O 3 (0001)
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Kortan, A.R.; Kopylov, N.; Kwo, J.; Hong, M.; Chen, C.P.; Mannaerts, J.P.; Liou, S.H.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:48Z |
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
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Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:48Z |
Advanced high 庥 dielectrics for nano-electronics - Science and technologies
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MINGHWEI HONG; Kwo, J.; Hong, M.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:48Z |
Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy
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Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:47Z |
Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics
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Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:47Z |
III-V MOSFET's with advanced high 庥 dielectrics
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Hong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:47Z |
Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
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Chang, C.-H.; Chiou, Y.-K.; Chang, Y.-C.; Lee, K.-Y.; Lin, T.-D.; Wu, T.-B.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:47Z |
Structure of HfO2films epitaxially grown on GaAs (001)
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Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:46Z |
Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures
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MINGHWEI HONG; Kwo, J.; Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:46Z |
Effect of Al incorporation in the thermal stability of atomic-layer- deposited HfO2 for gate dielectric applications
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Chiou, Y.-K.; Chang, C.-H.; Wang, C.-C.; Lee, K.-Y.; Wu, T.-B.; Kwo, R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:46Z |
Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing
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Chen, C.P.; Lee, Y.J.; Chang, Y.C.; MINGHWEI HONG; Lay, T.S.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y. |
| 臺大學術典藏 |
2019-12-27T07:49:45Z |
Cubic HfO2 doped with y2O2 epitaxial films on GaAs (001) of enhanced dielectric constant
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Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:45Z |
MBE grown high-quality Gd2O3/Si(1 1 1) hetero-structure
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Lin, T.D.; Hang, M.C.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:45Z |
A novel approach of using a MBE template for ALD growth of high-庥 dielectrics
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Lee, K.Y.; Lee, W.C.; Huang, M.L.; Chang, C.H.; Lee, Y.J.; Chiu, Y.K.; Wu, T.B.; Hong, M.; Kwo, R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:45Z |
MBE grown high 庥 dielectrics Ga2O3(Gd2O3) on GaN
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Chang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:45Z |
Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3 ) as a gate dielectric
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Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:44Z |
Local environment surrounding Co in MBE-grown Co-doped Hf O2 thin films probed by EXAFS
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Soo, Y.L.; Weng, S.C.; Sun, W.H.; Chang, S.L.; Lee, W.C.; Chang, Y.S.; Kwo, J.; Hong, M.; Ablett, J.M.; Kao, C.-C.; Liu, D.G.; Lee, J.F.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:44Z |
Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O2 films
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Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:44Z |
Structural and electrical characteristics of atomic layer deposited high 庥 HfO2on GaN
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Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:44Z |
Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering
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Hong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:44Z |
Determination of three-dimensional interfacial strain - A novel method of probing interface structure with X-ray Bragg-surface diffraction
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Stetsko, Yu.P.; MINGHWEI HONG; Sun, W.-C.; Chu, C.-H.; Chang, H.-C.; Wu, B.-K.; Chen, Y.-R.; Cheng, C.-W.; Chiu, M.-S.; Shen, Y.-C.; Wu, H.-H.; Hung, Y.-S.; Chang, S.-L.; Hong, M.-H.; Tang, M.-T. |
| 臺大學術典藏 |
2019-12-27T07:49:44Z |
III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectrics
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Hong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics
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You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
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Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3 (Gd2O 3) dielectric
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MINGHWEI HONG;Kwo, J.R.;Hong, M.;Chang, Y.-C.;Lin, T.-D.;Chen, C.-P.; Chen, C.-P.; Lin, T.-D.; Chang, Y.-C.; Hong, M.; Kwo, J.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
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MINGHWEI HONG;Lay, T.S.;Cheng, K.Y.;Liao, C.C.;Kwo, J.;Hong, M.;Lin, T.D.;Lee, K.Y.;Lee, Y.J.;Huang, M.L.;Chang, Y.C.; Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)
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Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG |
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