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"minghwei hong"的相關文件
顯示項目 286-295 / 801 (共81頁)
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| 臺大學術典藏 |
2018-09-10T08:12:52Z |
High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations
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Chu, RL;Lin, TD;Chu, LK;Huang, ML;Chang, CC;Hong, M;Lin, CA;Kwo, J; Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers
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Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2
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Chang, P;Lee, WC;Huang, ML;Lee, YJ;Hong, M;Kwo, J; Chang, P; Lee, WC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing
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Chang, YC;Merckling, C;Penaud, J;Lu, CY;Brammertz, G;Wang, WE;Hong, M;Kwo, J;Dekoster, J;Caymax, M;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111)
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Lee, YJ;Lee, WC;Huang, ML;Wu, SY;Nieh, CW;Hong, M;Kwo, J;Hsu, CH; Lee, YJ; Lee, WC; Huang, ML; Wu, SY; Nieh, CW; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS
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Lee, WC; Chang, P; Lee, YJ; Huang, ML; Lin, TD; Chu, LK; Chang, YC; Chiu, HC; Chang, YH; Lin, CA; others; MINGHWEI HONG; Lee, WC;Chang, P;Lee, YJ;Huang, ML;Lin, TD;Chu, LK;Chang, YC;Chiu, HC;Chang, YH;Lin, CA;others |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
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Hong, M;Kwo, J;Lin, TD;Huang, ML;Lee, WC;Chang, P; Hong, M; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT
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Chu, LK;Chu, RL;Lin, CA;Lin, TD;Chiang, TH;Kwo, J;Hong, Mingyi; Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial films
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Huang, SY;Hung, HY;Chang, P;Lin, WC;Lee, SF;Hong, M;Kwo, J; Huang, SY; Hung, HY; Chang, P; Lin, WC; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
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Lin, T;Chang, P;Chiu, H;Hong, M;Kwo, J;Lin, Y;Hsu, S; Lin, T; Chang, P; Chiu, H; Hong, M; Kwo, J; Lin, Y; Hsu, S; MINGHWEI HONG |
顯示項目 286-295 / 801 (共81頁)
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