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"miyamoto yasuyuki"的相關文件
顯示項目 1-10 / 26 (共3頁)
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| 國立交通大學 |
2019-04-02T06:04:29Z |
An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
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Wang, Chin-Te; Kuo, Chien-, I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng |
| 國立交通大學 |
2019-04-02T06:04:22Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
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Chang, Chia-Yuan; Chang, Edward Yi; Huang, Wei-Ching; Su, Yung-Hsuan; Trinh, Hai-Dang; Hsu, Heng-Tung; Miyamoto, Yasuyuki |
| 國立交通大學 |
2019-04-02T05:58:44Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
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Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki |
| 國立交通大學 |
2019-04-02T05:58:17Z |
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1-xAs)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
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Kuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra |
| 國立交通大學 |
2017-04-21T06:55:41Z |
A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
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Fatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:11Z |
High Perfonnance InAs-Channel HEMT for Low Voltage Milimeter Waive Applications
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Hsu, Heng-Tung; Chang, Chia-Yuan; Chang, Edward Yi; Ku, Chien-, I; Miyamoto, Yasuyuki |
| 國立交通大學 |
2016-03-28T00:04:14Z |
Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications
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Fatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:40:50Z |
InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
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Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:37:07Z |
An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
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Wang, Chin-Te; Kuo, Chien-I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng |
| 國立交通大學 |
2014-12-08T15:29:52Z |
InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
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Chang, Edward-Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Miyamoto, Yasuyuki |
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