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Showing items 11-26 of 26 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:29:32Z |
Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching
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Yu, Chia-Hui; Hsu, Heng-Tung; Chiang, Che-Yang; Kuo, Chien-I; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:28:33Z |
Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600GHz
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Fatah, Faiz; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Hsu, Ching-Yi; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:27:17Z |
Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
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Wang, Chin-Te; Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Hsu, Li-Han; Lim, Wee-Chin; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:25:10Z |
A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)
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Kuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Chen, Yu-Lin; Biswas, Dhrubes |
| 國立交通大學 |
2014-12-08T15:24:46Z |
High-performance In0.52Al0.48As/In(0.6)Ga(0.)4As power metamorphic HEMT for Ka-band applications
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Chang, Chia-Yuan; Chang, Edward Yi; Lien, Yi-Chung; Miyamoto, Yasuyuki; Chen, Szu-Hung; Chu, Li-Hsin |
| 國立交通大學 |
2014-12-08T15:19:01Z |
A Novel Metamorphic High Electron Mobility Transistors with (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice Channel Layer for Millimeter-Wave Applications
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Kuo, Chien-I; Hsu, Heng-Tung; Lu, Jung-Chi; Chang, Edward Yi; Wu, Chien-Ying; Miyamoto, Yasuyuki; Tsern, Wen-Chung |
| 國立交通大學 |
2014-12-08T15:13:59Z |
High-performance In0.52Al0.48As/In0.6Ga0.4As power metamorphic high electron mobility transistor for Ka-band applications
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Chang, Chia-Yuan; Chang, Edward Yi; Lien, Yi-Chung; Miyamoto, Yasuyuki; Kuo, Chien-I; Chen, Szu-Hung; Chu, Li-Hsin |
| 國立交通大學 |
2014-12-08T15:13:18Z |
Investigation of impact ionization in InAs-channel HEMT ford high-speed and low-power applications
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Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Datta, Suman; Radosavljevic, Marko; Miyamoto, Yasuyuki; Huang, Guo-Wei |
| 國立交通大學 |
2014-12-08T15:12:22Z |
RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology
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Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Yuan; Miyamoto, Yasuyuki; Datta, Suman; Radosavljevic, Marko; Huang, Guo-Wei; Lee, Ching-Ting |
| 國立交通大學 |
2014-12-08T15:10:58Z |
InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application
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Kuo, Chien-I; Hsu, Hen-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung |
| 國立交通大學 |
2014-12-08T15:10:28Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al(2)O(3) Gate Dielectric
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Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:07:59Z |
DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source-Drain Spacing Technology
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Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Wu, Chien-Ying; Chen, Yu-Lin; Hsiao, Yu-Lin |
| 國立交通大學 |
2014-12-08T15:07:28Z |
30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs
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Chang, Chia-Ta; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Huang, Jui-Chien; Lu, Chung-Yu; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:06:39Z |
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
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Kuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra |
| 國立交通大學 |
2014-12-08T15:03:46Z |
Investigation of Impact Ionization from In(x)Ga(1-x)As to InAs Channel HEMTs for High Speed and Low Power Applications
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Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Ta; Chang, Chia-Yuan; Miyamoto, Yasuyuki |
| 國立成功大學 |
2008-04 |
RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology
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Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Chang, Chia-Yuan; Miyamoto, Yasuyuki; Datta, Suman; Radosavljevic, Marko; Huang, Guo-Wei; Lee, Ching-Ting |
Showing items 11-26 of 26 (2 Page(s) Totally)
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