|
English
|
正體中文
|
简体中文
|
2808638
|
|
???header.visitor??? :
26757249
???header.onlineuser??? :
1063
???header.sponsordeclaration???
|
|
|
|
???tair.name??? >
???browser.page.title.author???
|
"mondal somnath"???jsp.browse.items-by-author.description???
Showing items 1-5 of 5 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:32:09Z |
Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer
|
Pan, Tung-Ming; Yen, Li-Chen; Mondal, Somnath; Lo, Chieh-Ting; Chao, Tien-Sheng |
| 國立交通大學 |
2014-12-08T15:30:31Z |
The Effect of Al and Ni Top Electrodes in Resistive Switching Behaviors of Yb2O3-Based Memory Cells
|
Mondal, Somnath; Her, Jim-Long; Ko, Fu-Hsiang; Pan, Tung-Ming |
| 國立交通大學 |
2014-12-08T15:24:19Z |
Effect of Ti doping concentration on resistive switching behaviors of Yb2O3 memory cell
|
Mondal, Somnath; Chen, Hung-Yu; Her, Jim-Long; Ko, Fu-Hsiang; Pan, Tung-Ming |
| 國立交通大學 |
2014-12-08T15:24:17Z |
Resistive Switching Characteristics of Tm2O3, Yb2O3, and Lu2O3-Based Metal-Insulator-Metal Memory Devices
|
Pan, Tung-Ming; Lu, Chih-Hung; Mondal, Somnath; Ko, Fu-Hsiang |
| 國立臺灣科技大學 |
2012 |
Improved Resistance Switching Characteristics in Ti-Doped Yb2O3 for Resistive Nonvolatile Memory Devices
|
Mondal, Somnath;Her, Jim-Long;Chen, Fa-Hsyang;Shih, Shao-Ju;Pan, Tung-Ming |
Showing items 1-5 of 5 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
