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Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
國立交通大學 |
2014-12-08T15:36:49Z |
Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors
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Ghosh, Saptarsi; Dinara, Syed Mukulika; Mukhopadhyay, Partha; Jana, Sanjay K.; Bag, Ankush; Chakraborty, Apurba; Chang, Edward Yi; Kabi, Sanjib; Biswas, Dhrubes |
國立交通大學 |
2014-12-08T15:35:53Z |
Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE
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Mukhopadhyay, Partha; Bag, Ankush; Gomes, Umesh; Banerjee, Utsav; Ghosh, Saptarsi; Kabi, Sanjib; Chang, Edward Y. I.; Dabiran, Amir; Chow, Peter; Biswas, Dhrubes |
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
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