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"nagarajan venkatesan"???jsp.browse.items-by-author.description???
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| 元智大學 |
Sep-19 |
Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
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李清庭; Anandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Chang, Edward Yi |
| 元智大學 |
Nov-21 |
Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD
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李清庭; Anandan, Deepak; Yu, Hung Wei; Chang, Edward Yi; Singh, Sankalp Kumar; Nagarajan, Venkatesan; Dee, Chang Fu; Ueda, Daisuke |
| 元智大學 |
Jan-19 |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
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李清庭; Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Chang, Edward Yi |
| 國立交通大學 |
2020-10-05T01:59:50Z |
Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement
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Nagarajan, Venkatesan; Chen, Kun-Ming; Chen, Bo-Yuan; Huang, Guo-Wei; Chuang, Chia-Wei; Lin, Chuang-Ju; Anandan, Deepak; Wu, Chai-Hsun; Han, Ping-Cheng; Singh, Sankalp Kumar; Tien-Tung Luong; Chang, Edward Yi |
| 國立交通大學 |
2020-07-01T05:22:04Z |
Low-Frequency Noise Characterization of AlGaN & x002F;GaN HEMTs and MIS-HEMTs Under UV Illumination
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Nagarajan, Venkatesan; Chen, Kun-Ming; Lin, Hsin-Yi; Hu, Hsin-Hui; Huang, Guo-Wei; Lin, Chuang-Ju; Chen, Bo-Yuan; Anandan, Deepak; Singh, Sankalp Kumar; Wu, Chai-Hsun; Chang, Edward Yi |
| 國立交通大學 |
2020-05-05T00:01:32Z |
Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications
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Chang, Edward Yi; Chien, Chao Hsin; Iwai, Hiroshi; Tsutsui, Kazuo; Kakushima, Kuniyuki; Nagarajan, Venkatesan; Hsu, Heng-Tung; Yao, Jing Neng; Wu, Chia-Hsun; Lee, Jin Hwa; Hsu, Chia Chieh; Lin, Yueh-Chin; Lin, Jia-Ching; Huang, Kuan Ning |
| 國立交通大學 |
2019-08-02T02:18:33Z |
A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects
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Nagarajan, Venkatesan; Chen, Kun-Ming; Wang, Huan-Chung; Singh, Sankalp Kumar; Anandan, Deepak; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2019-08-02T02:15:30Z |
Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance
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Singh, Sankalp Kumar; Kakkerla, Ramesh Kumar; Joseph, H. Bijo; Gupta, Ankur; Anandan, Deepak; Nagarajan, Venkatesan; Yu, Hung Wei; Thiruvadigal, D. John; Chang, Edward Yi |
| 國立交通大學 |
2019-08-02T02:15:28Z |
Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
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Anandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:47Z |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
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Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi |
Showing items 1-10 of 10 (1 Page(s) Totally)
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