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國立臺灣大學 |
2005-04 |
Cryogenic Operation of Third-Generation, 200-GHz Peak-fT , Silicon–Germanium Heterojunction Bipolar Transistors
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Banerjee, Bhaskar; Venkataraman, Sunitha; Lu, Yuan; Liang, Qingqing; Lee, Chang-Ho; Nuttinck, Sebastien; Heo, Dekhyuon; Chen, Emery Yi-Jan; Cressler, John D.; Laskar, Joy; Freeman, Greg; Ahlgren, David C. |
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