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Institution Date Title Author
國立交通大學 2014-12-08T15:17:21Z Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane Cheng, YL; Wang, YL; Hwang, GJ; O'Neill, ML; Karwacki, EJ; Liu, PT; Chen, CF

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