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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2021-12-30T03:02:00Z The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design M.-H. Liao; S. C. Huang; C. Y. Liu; P. G. Chen; S. C. Kao; C. Lien; MING-HAN LIAO
臺大學術典藏 2019-03-11T08:02:18Z The demonstration of the Si nano-tube device with the promising short channel control P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:18Z The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:17Z The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:15Z The demonstration of a D-SMT stressor on Ge planer n-MOSFETs P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:02:13Z Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles Y.-C. Chou; Z.-Y. Wang; S.-Y.Chen; G.-Y. Siang; H.-Y. Chen; C. Lo; P.-G. Chen; Y.-J. Lee; K.-S.Li; S. T. Chang; M. H. Lee; M. H. Lee;S. T. Chang;K.-S.Li;Y.-J. Lee;P.-G. Chen;C. Lo;H.-Y. Chen;G.-Y. Siang;S.-Y.Chen;Z.-Y. Wang;Y.-C. Chou;S.-S. Gu;R.-C. Hong;C.-Y. Liao;K.-T. Chen;M. H.Liao; M. H.Liao; K.-T. Chen; C.-Y. Liao; R.-C. Hong; S.-S. Gu
臺大學術典藏 2019-03-11T08:02:10Z Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF M.-C. Chen;K.-S. Li;M. Tang;S.-J. Huang;J.-W. Lee;S.-N. Liu;M.-J. Xie;C.-C. Cheng;K-Y. Chu;C. Liu;P.-G. Chen;M. H. Lee;M. H.Liao; M. H.Liao; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen
臺大學術典藏 2019-03-11T08:02:06Z Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistors J.-M. Hwang;M.-T. Wang;M.-H. Lee;Y.-C. Yao;Y.-A. Hsieh;P.-G. Chen;Z.-P. Yang;Y.-J. Lee;M. H.Liao; M. H.Liao; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. Hwang
臺大學術典藏 2019-03-11T08:02:05Z In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics P.-G. Chen; M. Tang; M. H. Lee; M. H. Lee;M. Tang;P.-G. Chen;M. H.Liao; M. H.Liao
臺大學術典藏 2019-03-11T08:02:03Z Experimental demonstration for ultralow on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs withimplant-free process P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2019-03-11T08:01:19Z ~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process C. P. Hsieh;P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen; C. P. Hsieh
臺大學術典藏 2019-03-11T08:01:14Z Sub-60mV-Swing Negative-Capacitance FinFET without Hysteresis Chenming Hu;Sayeef Salahuddin;F. L. Yang;W. K. Yeh;J. M. Sheih;M. C. Chen;M. H. Lee;C. C. Chen;C.-C. Cheng;C. H. Lin;T. Y. Lai;P.-G. Chen;K. S. Li;M. H.Liao; M. H.Liao; K. S. Li; P.-G. Chen; T. Y. Lai; C. H. Lin; C.-C. Cheng; C. C. Chen; M. H. Lee; M. C. Chen; J. M. Sheih; W. K. Yeh; F. L. Yang; Sayeef Salahuddin; Chenming Hu
臺大學術典藏 2019-03-11T08:01:10Z The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs P.-G. Chen;M. H.Liao; M. H.Liao; P.-G. Chen
臺大學術典藏 2017 Ferroelectric Al:HfO2 Negative Capacitance FETs C. W. Liu; K.-S. Li; C. W. Liu;K.-S. Li;S.T. Chang;K.-T. Chen;C.-Y. Liao;S.-Y. Chen;Z.-Y. Wang;R.-C. Hong;S.-S. Gu;H.-H.Chen;C.-H. Tang;C.-Y. Kuo;Y.-C. Chou;S.-T. Fan;P.-G. Chen;M. H. Lee;M. H.Liao; M. H.Liao; M. H. Lee; P.-G. Chen; S.-T. Fan; Y.-C. Chou; C.-Y. Kuo; C.-H. Tang; H.-H.Chen; S.-S. Gu; R.-C. Hong; Z.-Y. Wang; S.-Y. Chen; C.-Y. Liao; K.-T. Chen; S.T. Chang
國立中山大學 2001 Structural evolution from Paleogene extension to Latest Miocene-Recent arc-continent collision offshore Taiwan:comparison with on land geology C.Y. Huang;K. Xia;P.B. Yuan;P.G. Chen

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