臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	Repositories
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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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	機構典藏計畫網站
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	臺大學術典藏NTU Scholars

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Institution	Date	Title	Author
國立中山大學	2009	Application of Supercritical CO2 Fluid for Dielectric Improvement of SiOx Film	C.T. Tsai;T.C. Chang;P.T. Liu;Y.L. Cheng;K.T. Kin;F.S. Huang
國立中山大學	2007	N+-doped-layer free microcrystalline silicon thin-film transistor fabricated with the CuMg as source/drain metal	M.C. Wang;T.C. Chang;P.T. Liu;R.W. Xiao;L.F. Lin;Y.Y. Li;J.R. Chen
國立中山大學	2007	Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;P.S. Lin;S.C. Chen;J.Y. Chin;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2007	Analysis of parasitic resistance and channel sheet conductance of a-Si : H TFT under mechanical bending	M.C. Wang;T.C. Chang;P.T. Liu;S.W. Tsao;J.R. Chen
國立中山大學	2007	Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application	W.R. Chen;T.C. Chang;P.T. Liu;C.H. Tu;J.L. Yen;Y.T. Hsieh;R.Y. Cahng;C.Y. Chang
國立中山大學	2007	Source-drain barrier height engineering for suppressing the a-Si:H TFTs photo leakage current	M.C. Wang;T.C. Chang;P.T. Liu;S.W. Tsao;J.R. Chen
國立中山大學	2007	Nonvolatile memory characteristics of Nickel-Silicon-Nitride nanocrystal	W.R. Chen;T.C. Chang;P.T. Liu;J.L. Yen;C.H. Tu;C.Y. Chang
國立中山大學	2007	Low-temperature passivation of amorphous-silicon thin-film transistors with supercritical fluids	P.T. Liu;C.T. Tsai;T.C. Chang;C.W. Wang;P.Y. Yang;F.S. Yen
國立中山大學	2007	Photo leakage currents characteristic of F incorporated hydrogenated amorphous silicon thin-film transistor	M.C. Wang;T.C. Chang;P.T. Liu;S.W. Tsao;J.R. Chen
國立中山大學	2007	Pi-shape gate Polycrystalline Silicon Thin-Film-Transistor for Nonvolatile Memory Applications	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;C.C. Ko;Sidney Yang;L.W. Feng;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2007	A low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization	C.T. Tasi;T.C. Chang;P.T. Liu;P.Y. Yang;Y.C. Kuo;K.T. Kin;P.L. Chang;F.S. Yeh
國立中山大學	2007	The suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu/CuMg as source/drain metal	M.C. Wang;T.C. Chang;P.T. Liu;R.W. Xiao;L.F. Lin;Y.Y. Li;F.S. Huang;J.R. Chen
國立中山大學	2007	Nickel nanocrystals with HfO2 blocking oxide for Nonvolatile Memory Application	F.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou
國立中山大學	2007	Formation of stacked Ni silicide nanocrystals for nonvolatile memory application	W.R. Chen;T.C. Chang;P.T. Liu;P.S. Lin;C.H. Tu;C.Y. Chang
國立中山大學	2007	Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistors	M.C. Wang;T.C. Chang;P.T. Liu;Y.Y. Li;R.W. Xiao;L.F. Lin;J.R. Chen
國立中山大學	2007	Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD	T.S. Chang;T.C. Chang;P.T. Liu;T.S.W. Tsao;F.S. Yeh
國立中山大學	2007	The instability of a-Si : H TFT under mechanical strain with high frequency ac bias stress	M.C. Wang;T.C. Chang;P.T. Liu;W. Xiao;Y.P. Lin;J.R. Chen
國立中山大學	2007	Effects of supercritical fluids activation on carbon nanotube field emitters	P.T. Liu;C.T. Tsai;T.C. Chang;K.T. Kin;P.L. Chang;C.M. Chen;Y.C. Chen
國立中山大學	2007	Using Double layer CoSi2 Nanocrystals to Improve the Memory Effects of Nonvolatile Memory Devices	Y.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;U.S. Chen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou
國立中山大學	2007	Nonvolatile polycrystalline silicon thin film transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;P.H. Yen;C.F. Weng;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2007	Degradation behaviors of trigate nanowires poly-si TFTs with NH3 plasma passivation under hot-carrier stress	Y.C. Wu;T.C. Chang;P.T. Liu;L.W. Fen
國立中山大學	2007	Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals	P.H. Yeh;L.J. Chen;P.T. Liu;D.Y. Wang;T.C. Chang
國立中山大學	2007	Nickel silicide nanocrystals embedded in SiO2 and HfO2 for Nonvolatile Memory Application	F.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou
國立中山大學	2007	Metal nanocrystals as charge storage nodes for nonvolatile memory devices	P.H. Yeh;L.J. Chen;P.T. Liu;D.Y. Wang;T.C. Chang
國立中山大學	2007	Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide	Y.M. Yang;T.C. Chang;P.T. Liu;P.H. Yen;Y.C. Yu;J.Y. Lin;S.M. Sze;J.C. Lou
國立中山大學	2007	Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application	W.R. Chen;T.C. Chang;P.T. Liu;C.H. Tu;C.F. Weng;S.W. Tsao;C.Y. Chang
國立中山大學	2007	Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer	C.H. Tu;T.C. Chang;P.T. Liu;C.F. Weng;H.C. Liu;L.T. Chang;S.K. Lee;W.R. Chen;S.M. Sze;C.Y. Chang
國立中山大學	2007	Improved Performance of F-Ions-Implanted Poly-Si Thin Film Transistors using Solid Phase Crystallization and Excimer Laser Crystallization	C.H. Tu;T.C. Chang;P.T. Liu;C.Y. Yang;L.W. Feng;C.C. Tsai;L.T. Chang;Y.C. Wu;S.M. Sze;C.Y. Chang
國立中山大學	2007	A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;P.S. Lin;B.H. Tseng;J.H. Shy;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2007	Nonvolatile Si/SiO2/Si3N4/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;J.Y. Chin;P.H. Yeh;L.W. Feng;S.M. Sze;C.Y. Chang;C.H. Lien
國立中山大學	2006	A Novel Fabrication of Germanium Nanocrystal Embedded in Silicon-Oxygen-Nitride Layer	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;C.F. Weng;J.H. Shy;B.H. Tseng;T.Y. Tseng;S.M. Sze;C.Y. Chang
國立中山大學	2006	Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC	C.H. Tu;T.C. Chang;P.T. Liu;C.Y. Yang;C.H. Liu;W.R. Chen;Y.C. Wu;C.Y. Chang
國立中山大學	2006	Temperature effects of n-MOSFET devices with uniaxial mechanical strains	M.N. Tsai;T.C. Chang;P.T. Liu;Osbert Cheng;C.T. Huang
國立中山大學	2006	Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;S.M. Sze;C.Y. Chang
國立中山大學	2006	Enhancement of Brightness Uniformity by a New Voltage-Modulated Pixel Design for AMOLED Displays	H.Y. Lu;P.T. Liu;T.C. Chang;S. Chi
國立中山大學	2006	Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs	T.S. Chang;T.C. Chang;P.T. Liu;T.S. Chang;F.S. Yeh
國立中山大學	2006	Electrical Enhancement of Solid Phase Crystallized Poly-Si Thin-Film Transistors with Fluorine Ion Implantation	C.H. Tu;T.C. Chang;P.T. Liu;C.H. Chen;C.Y. Yang;Y.C. Wu;H.C. Liu;L.T. Chang;C.C. Tsai;S.M. Sze;C.Y. Chang
國立中山大學	2006	A novel method for growing polycrystalline Ge layer by using UHVCVD	C.H. Tu;T.C. Chang;P.T. Liu;T.H. Yang;H.W. Zan;C.Y. Chang
國立中山大學	2006	Application of the low dielectric methyl-silsesquiazane (MSZ)as a passivation layer on TFT-LCD	T.S. Chang;T.C. Chang;P.T. Liu;C.Y. Chiang;S.C. Chen;F.S. Yeh
國立中山大學	2006	A novel self aligned etch-stopper structure with lower photo leakage for AMLCD and sensor applications	C.Y. Liang;F.Y. Gan;P.T. Liu;F.S. Yen;H.L. Chen;T.C. Chang
國立中山大學	2006	High performance metal-induced lateral-crystallization polysilcion thin film transistor with multiple nanowire channel and multiple gates	Y.C. Wu;T.C. Chang;P.T. Liu;C.W. Chou;Y.C. Wu;C.H. Tu;C.Y. Chang
國立中山大學	2006	Activation of carbon nanotube emitters by using supercritical carbon dioxide fluids with propyl alcohol	P.T. Liu;C.T. Tsai;T.C. Chang;K.T. King;P.L. Chang;C.M. Chen;H.F. Cheng
國立中山大學	2006	Short-diode like diffusion capacitance of organic light emission devices	M.N. Tasi;T.C. Chang;P.T. Liu;C.W. Ko;C.J. Chen;K.M. Lo
國立中山大學	2006	The Improved Memory Window for Ge Nanocrystals Embedded in SiON Layer	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;Simon M. Sze;C.Y. Chang
國立中山大學	2006	Formation of silicon germanium nitride layer with distributed charge storage elements	C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;W.R. Chen;C.C. Tsai;L.T. Chang;C.Y. Chan
國立中山大學	2006	Improvement of Hydrogenated Amorphous Silicon TFT Performances With Low-k Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer	T.S. Chang;T.C. Chang;P.T. Liu;T.S. Chang;C.H. Tu;F.S. Yeh
國立中山大學	2006	High-performance polycrystalline silicon thin-film transistors with oxide–nitride–oxide gate dielectric and multiple nanowire channels	S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;C.C. Tsai;T.S. Chang;Chen-Hsin Lien
國立中山大學	2005	Improvement of reliability for polycrystalline thin film transistor using self-aligned fluorinated silica glass spacers	C.H. Tu;T.C. Chang;P.T. Liu;H.W. Zan;Y.H. Tai;Y.C. Wu;C.Y. Chang
國立中山大學	2005	Effects of oxygen plasma ashing on barrier dielectric SiCN film	C.W. Chen;T.C. Chang;P.T. Liu;T.S. Tsai;T.Y. Tseng
國立中山大學	2005	Low power device with NiSi2 nanocrystals embedded in silicon dioxide layer	P.H. Yen;C.H. Yu;L.J. Chen;H.H. Wu;P.T. Liu;T.C. Chang

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