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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Showing items 51-75 of 96  (4 Page(s) Totally)
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Institution Date Title Author
國立中山大學 2005 Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectric F.M. Yang;T.C. Chang;P.T. Liu;C.W. Chen;Y.H. Tai;J.C. Lou
國立中山大學 2005 An interfacial investigation of high dielectric constant material hafnium oxide on Si substrate S.C. Chen;J.C. Lou;C.H. Chien;P.T. Liu;T.C. Chang
國立中山大學 2005 High performance hydrogenated amorphous Si TFT for AMLCD and AMOLED C.W. Chen;T.C. Chang;P.T. Liu;T.Y. Tseng
國立中山大學 2005 Leakage conduction behavior in electron-beam-cured nanoporous silicate films P.T. Liu;T.M. Tsai;T.C. Chang
國立中山大學 2005 A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide T.C. Chang;S.T. Yan;Y.T. Chen;P.T. Liu;S.M. Sze
國立中山大學 2005 Electrical degradation of n-channel poly-si TFT under AC stress C.W. Chen;T.C. Chang;P.T. Liu;H.Y. Lu;C.F. Weng;C.W. Hu;T.Y. Tseng
國立中山大學 2005 Effects of channel width on electrical characteristics of polysilicon TFTs with nanowire channel Y.C. Wu;T.C. Chang;P.T. Liu;C.S. Chen;C.H. Tu;H.W. Zan;Y.H. Tai;C.Y. Chang
國立中山大學 2005 Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channel Y.C. Wu;T.C. Chang;P.T. Liu;C.W. Chou;Y.C. Wu;C.H. Tu;C.Y. Chang
國立中山大學 2005 Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low voltage nonvotatile memeory technology T.C. Chang;P.T. Liu;S.T. Yan;S.M. Sze
國立中山大學 2005 Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-flim transistors by pattern-dependent metal-induced lateral crystallization Y.C. Wu;T.C. Chang;C.W. Chen;Y.C. Wu;P.T. Liu;C.H. Tu;C.Y. Chang
國立中山大學 2005 Memeory effect of oxide/ oxygen-incorporated silicon carbide/ oxide sandwiched structure T.C. Chang;P.T. Liu;S.T. Yan;F.M. Yang;S.M. Sze
國立中山大學 2005 Enhanced performance of poly-Si thin film transistors using fluorine ion implantation C.H. Tu;T.C. Chang;P.T. Liu;H.W. Zan;Y.H. Tai;Y.C. Wu;C.Y. Chang
國立中山大學 2005 Mobility enhancement of polycrystalline-Si thin-film transistor using nanowire channels by pattern-dependent metal-induced lateral crystallization Y.C. Wu;T.C. Chang;P.T. Liu;Y.C. Wu;C.W. Chou;C.Y. Chang
國立中山大學 2004 Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application T.C. Chang;T.M. Tsai;P.T. Liu;S.T. Yan;Y.C. Chang;H. Aoki;S.M. Sze;T.Y. Tseng
國立中山大學 2004 Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;T.Y. Tseng
國立中山大學 2004 CMP of Ultra Low-k Material Porous-Polysilazane (PPSZ) for Interconnect Applications T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;Y.C. Chang;T.Y. Tseng
國立中山大學 2004 CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;Y.C. Chang;T.Y. Tseng
國立中山大學 2004 CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;T.Y. Tseng
國立中山大學 2004 A novel distributed charge storage with GeO2 nano-dots T.C. Chang;S.T. Yan;P.T. Liu;C.H. Hsu;M.T. Tang;S.M. Sze
國立中山大學 2004 Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications T.C. Chang;S.T. Yan;P.T. Liu;H. Aoki;S.M. Sze
國立中山大學 2004 Structrual characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization J.H. Wang;P.T. Liu;T.C. Chang;L.J. Chen
國立中山大學 2004 CMP of ultra low-k Methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;T.Y. Tseng
國立中山大學 2004 Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integraged interconnect application T.C. Chang;T.M. Tsai;P.T. Liu;Y.C. Chang;J. Aoki;S.M. Sze;T.Y. Tseng
國立中山大學 2004 Quasisuperlattice storage: A concept of multilevel charge stoage T.C. Chang;S.T. Yan;P.T. Liu;C.W. Chen;H.H. Wu;S.M. Sze
國立中山大學 2004 Cu-penetration induced breakdown mechanism for a-SiCN C.W. Chen;P.T. Liu;T.C. Chang;J.H. Yang;T.M. Tsai;H.H. Wu;T.Y. Tseng

Showing items 51-75 of 96  (4 Page(s) Totally)
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