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Showing items 1-10 of 49 (5 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:55Z |
Effects of isolation oxides on undercut formation and electrical characteristics for silicon selective epitaxial growth
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Tseng, HC; Chang, CY; Pan, FM; Chen, LP |
| 國立交通大學 |
2019-04-02T05:59:26Z |
STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY |
| 國立交通大學 |
2019-04-02T05:59:14Z |
EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTH
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TSENG, HC; CHANG, CY; PAN, FM; CHEN, LP |
| 國立交通大學 |
2014-12-08T15:46:26Z |
Effects of morphology and surface characteristics of poly(imide siloxane)s and deep UV/O-3 surface treatment on the interfacial adhesion of poly(imide siloxane)/alloy-42 leadframe joints
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Jwo, SL; Whang, WT; Hsieh, TE; Pan, FM; Liaw, WC |
| 國立交通大學 |
2014-12-08T15:46:22Z |
Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealing
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Luo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM; Chang, TC |
| 國立交通大學 |
2014-12-08T15:46:11Z |
The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
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Chang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:53Z |
Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy
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Luo, JS; Lin, WT; Chang, CY; Shih, PS; Pan, FM |
| 國立交通大學 |
2014-12-08T15:44:42Z |
The effect of copper on gate oxide integrity
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Lin, YH; Wu, YH; Chin, A; Pan, FM |
| 國立交通大學 |
2014-12-08T15:43:59Z |
The strong degradation of 30 angstrom gate oxide integrity contaminated by copper
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Lin, YH; Chen, YC; Chan, KT; Pan, FM; Hsieh, IJ; Chin, A |
| 國立交通大學 |
2014-12-08T15:43:27Z |
An investigation of scanning capacitance microscopy on iron-contaminated p-type silicon
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Chang, MN; Chang, TY; Pan, FM; Wu, BW; Lei, TF |
Showing items 1-10 of 49 (5 Page(s) Totally)
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