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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:15Z |
ELECTROLUMINESCENCE CHARACTERISTICS AND CURRENT-CONDUCTION MECHANISM OF A SI-C-H-P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYER INSERTED AT P-I INTERFACE
|
JEN, TS; PAN, JW; SHIN, NF; HONG, JW; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:04:13Z |
HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACE
|
JEN, TS; PAN, JW; SHIN, NF; TSAY, WC; HONG, JW; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:45Z |
ELECTROLUMINESCENCE CHARACTERISTICS AND CURRENT-CONDUCTION MECHANISM OF A SI-C-H-P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYER INSERTED AT P-I INTERFACE
|
JEN, TS; PAN, JW; SHIN, NF; HONG, JW; CHANG, CY |
Showing items 1-3 of 3 (1 Page(s) Totally)
1
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