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Showing items 1-16 of 16 (1 Page(s) Totally)
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| 國立交通大學 |
2020-03-02T03:23:33Z |
Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning
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Jung, Pei-Yu; Panda, Debashis; Chandrasekaran, Sridhar; Rajasekaran, Sailesh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-12-13T01:12:22Z |
Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-12-13T01:12:16Z |
Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitor
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Pattanayak, Bhaskar; Simanjuntak, Firman Mangasa; Panda, Debashis; Yang, Chih-Chieh; Kumar, Amit; Phuoc-Anh Le; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-10-05T00:08:41Z |
Improving linearity by introducing Al in HfO2 as a memristor synapse device
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Chandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Saminathan, R.; Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-03T06:40:07Z |
Status and Prospects of ZnO-Based Resistive Switching Memory Devices
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Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-08-21T05:53:11Z |
A Collective Study on Modeling and Simulation of Resistive Random Access Memory
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Panda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen |
| 國立交通大學 |
2017-04-21T06:55:13Z |
Impacts of Co doping on ZnO transparent switching memory device characteristics
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Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:22Z |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming
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Simanjuntak, Firman Mangasa; Panda, Debashis; Tsai, Tsung-Ling; Lin, Chun-An; Wei, Kung-Hwa; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T11:20:50Z |
Perovskite Oxides as Resistive Switching Memories: A Review
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Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:31:27Z |
IMPROVEMENT OF RESISTIVE SWITCHING PROPERTIES OF Ti/ZrO2/Pt WITH EMBEDDED GERMANIUM
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Lin, Chun-An; Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Forming-free bipolar resistive switching in nonstoichiometric ceria films
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Ismail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:30:56Z |
One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications
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Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:29:46Z |
Growth, dielectric properties, and memory device applications of ZrO2 thin films
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Panda, Debashis; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:29:44Z |
Enhanced charge storage characteristics of nickel nanocrystals embedded flash memory structures
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Ray, Sounak K.; Panda, Debashis; Aluguri, Rakesh |
| 國立交通大學 |
2014-12-08T15:22:51Z |
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
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Panda, Debashis; Huang, Chun-Yang; Tseng, Tseung-Yuen |
Showing items 1-16 of 16 (1 Page(s) Totally)
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