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Taiwan Academic Institutional Repository >
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"passlack m"
Showing items 16-25 of 27 (3 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T05:56:11Z |
C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applications
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
Low interface state density oxide-GaAs structures fabricated by in-situ molecular beam epitaxy
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Passlack, M;Hong, M; Passlack, M; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
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Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
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Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG; Schubert, EF; Passlack, M;Hong, M;Schubert, EF;Kwo, JR;Mannaerts, JP;Chu, SNG;Moriya, N;Thiel, FA; Passlack, M; Hong, M |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
Ga2O3 films for electronic and optoelectronic applications
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Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
Capacitance-voltage and current-voltage characterization of AlxGa1- xAs-GaAs structures
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Passlack, M;Hong, M;Mannaerts, JP;Chiu, TH;Mendonca, CA;Centanni, JC; Passlack, M; Hong, M; Mannaerts, JP; Chiu, TH; Mendonca, CA; Centanni, JC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Ga203 films for electronic and optoelectronic ap
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Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES
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Passlack, M;Hong, M;Schubert, EF;Mannaerts, JP;HOBSON, WS;MORIYA, N;LOPATA, J;ZYDZIK, GJ; Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
Dielectric properties of electron-beam deposited Ga2O3 films
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Passlack, M;Hunt, NEJ;Schubert, EF;Zydzik, GJ;Hong, M;Mannaerts, JP;Opila, RL;Fischer, RJ; Passlack, M; Hunt, NEJ; Schubert, EF; Zydzik, GJ; Hong, M; Mannaerts, JP; Opila, RL; Fischer, RJ; MINGHWEI HONG |
| 國立成功大學 |
2014-04 |
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
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Wang, C. H.; Doornbos, G.; Astromskas, G.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Huang, M. L.; Lin, C. H.; Hsieh, C. H.; Chang, Y. S.; Lee, T. L.; Chen, Y. Y.; Ramvall, P.; Lind, E.; Hsu, W. C.; Wernersson, L. -E.; Droopad, R.; Passlack, M.; Diaz, C. H. |
Showing items 16-25 of 27 (3 Page(s) Totally)
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