|
"passlack m"的相关文件
显示项目 11-20 / 27 (共3页)
<< < 1 2 3 > >>
每页显示[10|25|50]项目
| 臺大學術典藏 |
2018-09-10T06:28:12Z |
A Ga 2 O 3 passivation technique compatible with GaAs device processing
|
Hong, M; Passlack, M; Mannaerts, JP; Harris, TD; Schnoes, ML; Opila, RL; Krautter, HW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy
|
Passlack, M;Hong, M;Mannaerts, JP;Kwo, JR;Tu, LW; Passlack, M; Hong, M; Mannaerts, JP; Kwo, JR; Tu, LW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Low interface state density oxide-GaAs structures fabricated by insitu molecular beam epitaxy
|
Hong, M; Passlack, M; Mannaerts, JP; Kwo, J; Chu, SNG; Moriya, N; Hou, SY; Fratello, VJ; MINGHWEI HONG; Hong, M;Passlack, M;Mannaerts, JP;Kwo, J;Chu, SNG;Moriya, N;Hou, SY;Fratello, VJ |
| 臺大學術典藏 |
2018-09-10T05:56:12Z |
Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by insitu molecular beam epitaxy
|
Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
GaAs surface passivation using in-situ oxide deposition
|
Passlack, M;Hong, M;Opila, RL;Mannaerts, JP;Kwo, JR; Passlack, M; Hong, M; Opila, RL; Mannaerts, JP; Kwo, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:11Z |
C-V and G-V characterization of in-situ fabricated Ga 2 O 3 GaAs interfaces for inversion/accumulation device and surface passivation applications
|
Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
Low interface state density oxide-GaAs structures fabricated by in-situ molecular beam epitaxy
|
Passlack, M;Hong, M; Passlack, M; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
Observation of inversion layers at Ga 2 O 3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
|
Passlack, M;Hong, M;Mannaerts, JP; Passlack, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
|
Kwo, JR; Mannaerts, JP; Chu, SNG; Moriya, N; Thiel, FA; MINGHWEI HONG; Schubert, EF; Passlack, M;Hong, M;Schubert, EF;Kwo, JR;Mannaerts, JP;Chu, SNG;Moriya, N;Thiel, FA; Passlack, M; Hong, M |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
Ga2O3 films for electronic and optoelectronic applications
|
Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
显示项目 11-20 / 27 (共3页)
<< < 1 2 3 > >>
每页显示[10|25|50]项目
|
