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Showing items 1-13 of 13 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN metal oxide semiconductor field effect transistors
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Ren, F; Pearton, SJ; Abernathy, CR; Baca, A; Cheng, P; Shul, RJ; Chu, SNG; Hong, M; Schurman, MJ; Lothian, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:25Z |
Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
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Ren, F; Hong, M; Chu, SNG; Marcus, MA; Schurman, MJ; Baca, A; Pearton, SJ; Abernathy, CR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectrics
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Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Marcus, MA; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:16Z |
Metal Contact On Nitride Based Materials
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Ren, E; Abernathy, CR; Shurman, M; Hong, M; Pearton, SJ; Lothian, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors
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Abernathy, CR; Baca, A; Chu, SNG; Hong, M; Lothian, JR; Marcus, MA; Pearton, SJ; Ren, F; Schurman, MJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:18Z |
Dielectrics for GaN based MIS-diodes
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Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Macos, M; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs
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Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
GaN electronics for high power, high temperature applications
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Pearton, SJ; Ren, F; Zhang, AP; Dang, G; Cao, XA; Cho, H; Abernathy, CR; Han, J; Baca, AG; Monier, C; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:31Z |
in-V MOSFET Using Ga203/Gd203 As The Gate Oxide
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Ren, F; Hong, M; Wang, YC; Kwo, J; Mannaerts, JP; Abernathy, CR; Pearton, SJ; MINGHWEI HONG |
| 國立臺灣大學 |
2006-05 |
Effect of Ozone Cleaning and Annealing on Ti/Al/Pt/Au Ohmic Contacts on GaN Nanowires
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Chang, CY; Lan, TW; Chi, GC; Chen, LC; Chen, KH; Chen, JJ; Jang, SW; Ren, F; Pearton, SJ |
| 國立臺灣大學 |
2006-04 |
Electroluminescence from ZnO Nanowire/Polymer Composite p-n Junction
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Chang, CY; Tsao, FC; Pan, CJ; Chi, GC; Wang, HT; Chen, JJ; Ren, F; Norton, DP; Pearton, SJ; Chen, KH; Chen, LC |
| 國立臺灣大學 |
2006-04 |
Electrical Transport Properties of Single GaN and InN Nanowires
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Chang, CY; Chi, GC; Wang, WM; Chen, LC; Chen, KH; Ren, F; Pearton, SJ |
| 國立臺灣大學 |
2005-08 |
Transport Properties of InN Nanowires
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Chang, CY; Chi, GC; Wang, WM; Chen, LC; Chen, KH; Ren, F; Pearton, SJ |
Showing items 1-13 of 13 (1 Page(s) Totally)
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