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Showing items 1-12 of 12 (1 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:32Z |
Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing
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Chang, Y.C.;Merckling, C.;Penaud, J.;Lu, C.Y.;Brammertz, G.;Wang, W.-E.;Hong, M.;Kwo, J.;Dekoster, Caymax, M.;Meuris, M.;Heyns, M.; Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Brammertz, G.; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster, Caymax, M.; Meuris, M.; Heyns, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:32Z |
Effective reduction of interfacial traps in Al2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing
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Chang, Y.C.;Merckling, C.;Penaud, J.;Lu, C.Y.;Wang, W.-E.;Dekoster, J.;Meuris, M.;Caymax, M.;Heyns, M.;Kwo, J.;Hong, M.; Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Wang, W.-E.; Dekoster, J.; Meuris, M.; Caymax, M.; Heyns, M.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
H2S molecular beam passivation of Ge(0 0 1)
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Merckling, C.;Chang, Y.C.;Lu, C.Y.;Penaud, J.;El-Kazzi, M.;Bellenger, F.;Brammertz, G.;Hong, M.;Kwo, J.;Meuris, M.;Dekoster, J.;Heyns, M.M.;Caymax, M.; Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M.M.; Caymax, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
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Merckling, C.;Chang, Y.C.;Lu, C.Y.;Penaud, J.;Brammertz, G.;Scarrozza, M.;Pourtois, G.;Kwo, J.;Hong, M.;Dekoster, J.;Meuris, M.;Heyns, M.;Caymax, M.; Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; MINGHWEI HONG |
| 國立交通大學 |
2019-04-02T05:59:51Z |
H2S molecular beam passivation of Ge(001)
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M. |
| 國立交通大學 |
2019-04-02T05:58:57Z |
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
|
Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
H 2 S molecular beam passivation of Ge (001)
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Merckling, C;Chang, YC;Lu, CY;Penaud, J;El-Kazzi, M;Bellenger, F;Brammertz, G;Hong, M;Kwo, J;Meuris, M;others; Merckling, C; Chang, YC; Lu, CY; Penaud, J; El-Kazzi, M; Bellenger, F; Brammertz, G; Hong, M; Kwo, J; Meuris, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation
|
Merckling, C;Chang, YC;Lu, CY;Penaud, J;Brammertz, G;Scarrozza, M;Pourtois, G;Kwo, J;Hong, M;Dekoster, J;others; Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; Hong, M; Dekoster, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing
|
Chang, YC;Merckling, C;Penaud, J;Lu, CY;Wang, WE;Dekoster, J;Meuris, M;Caymax, M;Heyns, M;Kwo, J;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing
|
Chang, YC;Merckling, C;Penaud, J;Lu, CY;Brammertz, G;Wang, WE;Hong, M;Kwo, J;Dekoster, J;Caymax, M;others; Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:48:27Z |
H(2)S molecular beam passivation of Ge(001)
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M. |
| 國立交通大學 |
2014-12-08T15:26:43Z |
Defect density reduction of the Al(2)O(3)/GaAs(001) interface by using H(2)S molecular beam passivation
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. |
Showing items 1-12 of 12 (1 Page(s) Totally)
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