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机构 日期 题名 作者
國立交通大學 2020-10-05T02:01:27Z Self-organized Pairs of Ge Double Quantum Dots with Tunable Sizes and Spacings Enable Room-Temperature Operation of Qubit and Single-Electron Devices Peng, Kang-Ping; Chen, Ching-Lun; Tang, Ying-Tsan; Kuo, David; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2020-10-05T01:59:51Z Coordinated and Simultaneous Formation of Paired Ge Quantum Dots by Thermal Oxidation of Designer Poly-SiGe Spacer Structures Chen, Han-Yu; Peng, Kang-Ping; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2020-07-01T05:22:11Z Trapping Depth and Transition Probability of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor Change, You-Tai; Tsai, Yueh-Lin; Peng, Kang-Ping; Su, Chun-Jung; Li, Pei-Wen; Lin, Horng-Chih
國立交通大學 2020-05-05T00:02:22Z Study on random telegraph noise of high-idmetal-gate gate-all-around poly-Si nanowire transistors Lin, Horng-Chih; Chang, You-Tai; Tsai, Yueh-Lin; Peng, Kang-Ping; Su, Chun-Jung; Li, Pei-Wen
國立交通大學 2020-01-02T00:03:29Z Feasibility of Ge double quantum dots with high symmetry and tunability in size and inter-dot spacing Peng, Kang-Ping; Huang, Tsung-Lin; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2019-09-02T07:46:20Z Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si3N4 for advanced complementary metal-oxide-semiconductor photonics and electronics applications Peng, Kang-Ping; Huang, Tsung Lin; George, Tom; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2019-09-02T07:46:20Z Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe Huang, Tsung-Lin; Peng, Kang-Ping; Chen, Ching-Lun; Lin, Horng-Chih; George, Tom; Li, Pei-Wen
國立交通大學 2019-04-02T06:04:22Z The development of low-temperature atomic layer deposition of HfO2 for TEM sample preparation on soft photo-resist substrate Peng, Kang-Ping; Liu, Ya-Chi; Lin, I-Feng; Lin, Chih-Chien; Huang, Shu-Wei; Ting, Chao-Cheng
國立交通大學 2019-04-02T06:04:22Z A novel solution for efficient in situ TEM cross-section and plan-view analyses with an advanced sample preparation scheme Peng, Kang-Ping; Hsu, Kim; Ger, Finn; Tsai, Tsung-Chang
國立交通大學 2019-04-02T06:04:21Z ZnON Contacts Enabling High-performance 3-D InGaZnO Inverters Kuan, Chin-I; Peng, Kang-Ping; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2019-04-02T05:58:41Z Self-Organized Ge Nanospherical Gate/SiO2/Si0.15Ge0.85-Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio Liao, Po-Hsiang; Peng, Kang-Ping; Lin, Horng-Chih; George, Thomas; Li, Pei-Wen
國立交通大學 2019-04-02T05:57:55Z The Germanium "Halo": Visualizing Ge interstitial dynamics in nanocrystallite formation George, Thomas; Huang, Tsung-Lin; Hsueh, Chui-Yu; Peng, Kang-Ping; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2018-08-21T05:57:00Z Study on Random Telegraph Noise of Gate-All-Around Poly-Si Junctionless Nanowire Transistors Yang, Chen-Chen; Peng, Kang-Ping; Chen, Yung-Chen; Lin, Horng-Chih; Li, Pei-Wen
國立交通大學 2018-08-21T05:53:36Z Fabrication and characterization of novel gate-all-around polycrystalline silicon junctionless field-effect transistors with ultrathin horizontal tube-shape channel Chang, You-Tai; Peng, Kang-Ping; Li, Pei-Wen; Lin, Horng-Chih
國立交通大學 2014-12-08T15:36:06Z The effects of channel doping concentration for n-type junction-less double-gate poly-Si nanostrip transistors Liu, Keng-Ming; Peng, Fan-I; Peng, Kang-Ping; Lin, Horng-Chih; Huang, Tiao-Yuan

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