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Showing items 11-15 of 15 (2 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:41Z |
Self-Organized Ge Nanospherical Gate/SiO2/Si0.15Ge0.85-Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio
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Liao, Po-Hsiang; Peng, Kang-Ping; Lin, Horng-Chih; George, Thomas; Li, Pei-Wen |
| 國立交通大學 |
2019-04-02T05:57:55Z |
The Germanium "Halo": Visualizing Ge interstitial dynamics in nanocrystallite formation
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George, Thomas; Huang, Tsung-Lin; Hsueh, Chui-Yu; Peng, Kang-Ping; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2018-08-21T05:57:00Z |
Study on Random Telegraph Noise of Gate-All-Around Poly-Si Junctionless Nanowire Transistors
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Yang, Chen-Chen; Peng, Kang-Ping; Chen, Yung-Chen; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2018-08-21T05:53:36Z |
Fabrication and characterization of novel gate-all-around polycrystalline silicon junctionless field-effect transistors with ultrathin horizontal tube-shape channel
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Chang, You-Tai; Peng, Kang-Ping; Li, Pei-Wen; Lin, Horng-Chih |
| 國立交通大學 |
2014-12-08T15:36:06Z |
The effects of channel doping concentration for n-type junction-less double-gate poly-Si nanostrip transistors
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Liu, Keng-Ming; Peng, Fan-I; Peng, Kang-Ping; Lin, Horng-Chih; Huang, Tiao-Yuan |
Showing items 11-15 of 15 (2 Page(s) Totally)
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