臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T03:29:24Z	Novel structure in Ge/Si epilayers grown at low temperature	Peng, Y.H.; Kuan, C.H.; CHIEH-HSIUNG KUAN; Chen, C.C.; Cheng, H.H.; Chia, C.T.; Markov, V.A.; Guo, X.J.
國立臺灣科技大學	2018	Speechbubbles: Enhancing captioning experiences for Deaf and hard-of-hearing people in group conversations	Peng, Y.-H.;Hsu, M.-W.;Taele, P.;Lin, T.-Y.;Lai, P.-E.;Hsu, L.;Chen, T.-C.;Wu, T.-Y.;Chen, Y.-A.;Tang, H.-H.;Chen, M.Y.
國立臺灣科技大學	2016	Low temperature annealing effect on photoresponse of the bilayer structures of ZnO nanorod/nanodiamond films based on ultraviolet photodetector	Huang, B.-R;Ke, W.-C;Peng, Y.-H;Liou, R.-H.
國立政治大學	2014-10	On Selecting Feature-Value Pairs on Smart Phones for Activity Inferences	Njoo, G. S.;Peng, Y.-H.;Peng, W.-C.;Hsu, K.-W.; 徐國偉
國立臺灣科技大學	2012	Evaluation of the photochemical stability of zinc sulfide as protective layer on silver indium sulfide photocatalyst film	Kuo, Y.-L.;Wu, C.-C.;Peng, Y.-H.;Chang, W.-S.
輔英科技大學	2010-02-01	An Algorithm and Applications to Sequence Alignment with Weighted Constraints	Peng, Y.H.;Yang, C.B.;Tseng, K.T.
國立臺灣科技大學	2010	A time-domain SAR smart temperature sensor with curvature compensation and a 3σ inaccuracy of 0.4°C ∼ 0.6°C over a 0°C to 90°C range	Chen P.; Chen C.-C.; Peng Y.-H.; Wang K.-M.; Wang Y.-S.
國立臺灣科技大學	2010	A Time-Domain SAR Smart Temperature Sensor With Curvature Compensation and a 3 sigma Inaccuracy of-0.4 degrees C similar to+0.6 degrees C Over a 0 degrees C to 90 degrees C Range	Chen, P.;Chen, C.C.;Peng, Y.H.;Wang, K.M.;Wang, Y.S.
國立臺灣大學	2009-07	Selectively enhanced emission and suppression in Si0.5Ge0.5/Si multiple quantum wells by photonic crystals	Wei, C.M.; Chen, T.T.; Chen, C.W.; Wang, C.H.; Chen, Y.F.; Peng, Y.H.; Kuan, C.H.
國立臺灣科技大學	2009	A digital pulse width modulator based on pulse shrinking mechanism	Chen P.; Chen T.-K.; Hu H.-T.; Peng Y.-H.; Chen Y.-J.
國立臺灣大學	2009	Selectively enhanced emission and suppression in Si0. 5Ge0. 5/Si multiple quantum wells by photonic crystals	Wei, C. M.; Chen, T. T.; Chen, C. W.; Wang, C. H.; Chen, Y. F.; Peng, Y. H.; Kuan, C. H.
國立臺灣大學	2008-09	Electroluminescence Enhancement of SiGe/Si Multiple Quantum Wells Through Nanowall Structures	Chen, T. T.; Hsieh, Y. P.; Wei, C. M.; Chen, Y. F.; Chen, L. C.; Chen, K. H.; Peng, Y. H.; Kuan, C. H.
國立臺灣大學	2008	Characterization and modeling of fast traps in thermal agglomerating germanium nanocrystal metal-oxide-semiconductor capacitor	Chiang, K. H.; Lu, S. W.; Peng, Y. H.; Kuan, C. H.; Tsai, C. S.
國立臺灣大學	2007	In-plane optical anisotropy in self-assembled Ge quantum dots induced by interfacial chemical bonds	Wei, C. M.; Chen, T. T.; Chen, Y. F.; Peng, Y. H.; Kuan, C. H.
國立臺灣大學	2007	Photogalvanic effects for interband transition in p-Si0.5Ge0.5/Si multiple quantum wells	Wei, C. M.; Cho, K. S.; Chen, Y. F.; Peng, Y. H.; Chiu, C. W.; Kuan, C. H.
臺大學術典藏	2007	In-plane optical anisotropy in self-assembled Ge quantum dots induced by interfacial chemical bonds	Wei, C.M.; Chen, T.T.; Chen, Y.F.; Peng, Y.H.; Kuan, C.H.; CHIEH-HSIUNG KUAN; YANG-FANG CHEN
臺大學術典藏	2005	A novel high speed optical scanning platform	Jia-Yush Yen;Peng, Y.-H.;Lee, J.-F.;Yen, J.-Y.;Yeh, Y.-C.;Jia-Yush Yen; Yeh, Y.-C.; Yen, J.-Y.; Lee, J.-F.; Peng, Y.-H.; JIA-YUSH YEN
國立臺灣大學	2004-05	Electroluminescence evolution of Ge quantum-dot diodes with the fold number	Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S.
國立臺灣大學	2004	The evolution of electroluminescence in Ge quantum-dot diodes with the fold number	Peng, Y. H.; Hsu, Chih-Hsiung; Kuan, C. H.; Liu, C. W.; Chen, P. S.; Tsai, M.-J.; Suen, Y. W.
國立臺灣大學	2003-01	Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum	Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H.
國立臺灣大學	2003	Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum	Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H.
臺大學術典藏	2003	Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum	CHIEH-HSIUNG KUAN; Cheng, H.H.; Kuan, C.H.; Chen, C.C.; Peng, Y.H.; Peng, Y.H.;Chen, C.C.;Kuan, C.H.;Cheng, H.H.
國立臺灣大學	2002-01	Effect of low-temperature Si buffer layer on SiGe growth deposited bu molecular beam epitaxy	Lee, S. W.; Chen, H. C.; Chen, L. J.; Peng, Y. H.; Kuan, C. H.; Cheng, H. H.
國立臺灣大學	2002	Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity	Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H.
臺大學術典藏	2002	Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy	Lee, S.W.; Chen, H.C.; Chen, L.J.; Peng, Y.H.; Kuan, C.H.; Cheng, H.H.; CHIEH-HSIUNG KUAN

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