English  |  正體中文  |  简体中文  |  0  
???header.visitor??? :  51519511    ???header.onlineuser??? :  888
???header.sponsordeclaration???
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
???ui.leftmenu.abouttair???

???ui.leftmenu.bartitle???

???index.news???

???ui.leftmenu.copyrighttitle???

???ui.leftmenu.link???

"peng y h"???jsp.browse.items-by-author.description???

???jsp.browse.items-by-author.back???
???jsp.browse.items-by-author.order1??? ???jsp.browse.items-by-author.order2???

Showing items 66-75 of 80  (8 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 > >>
View [10|25|50] records per page

Institution Date Title Author
臺大學術典藏 2007 In-plane optical anisotropy in self-assembled Ge quantum dots induced by interfacial chemical bonds Wei, C.M.; Chen, T.T.; Chen, Y.F.; Peng, Y.H.; Kuan, C.H.; CHIEH-HSIUNG KUAN; YANG-FANG CHEN
臺大學術典藏 2005 A novel high speed optical scanning platform Jia-Yush Yen;Peng, Y.-H.;Lee, J.-F.;Yen, J.-Y.;Yeh, Y.-C.;Jia-Yush Yen; Yeh, Y.-C.; Yen, J.-Y.; Lee, J.-F.; Peng, Y.-H.; JIA-YUSH YEN
國立臺灣大學 2004-05 Electroluminescence evolution of Ge quantum-dot diodes with the fold number Chen, K.T.; Peng, Y.H.; Hsu, C.H.; Kuan, C.H.; Liu, C.W.; Chen, P.S.
國立臺灣大學 2004 The evolution of electroluminescence in Ge quantum-dot diodes with the fold number Peng, Y. H.; Hsu, Chih-Hsiung; Kuan, C. H.; Liu, C. W.; Chen, P. S.; Tsai, M.-J.; Suen, Y. W.
國立臺灣大學 2003-01 Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H.
國立臺灣大學 2003 Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H.
臺大學術典藏 2003 Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum CHIEH-HSIUNG KUAN; Cheng, H.H.; Kuan, C.H.; Chen, C.C.; Peng, Y.H.; Peng, Y.H.;Chen, C.C.;Kuan, C.H.;Cheng, H.H.
國立臺灣大學 2002-01 Effect of low-temperature Si buffer layer on SiGe growth deposited bu molecular beam epitaxy Lee, S. W.; Chen, H. C.; Chen, L. J.; Peng, Y. H.; Kuan, C. H.; Cheng, H. H.
國立臺灣大學 2002 Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H.
臺大學術典藏 2002 Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy Lee, S.W.; Chen, H.C.; Chen, L.J.; Peng, Y.H.; Kuan, C.H.; Cheng, H.H.; CHIEH-HSIUNG KUAN

Showing items 66-75 of 80  (8 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 > >>
View [10|25|50] records per page