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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:17Z |
Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatments
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Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:15Z |
Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxane
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Chang, TC; Liu, PT; Mei, YJ; Mor, YS; Perng, TH; Yang, YL; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:01Z |
Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide
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Perng, TH; Chien, CH; Chen, CW; Lin, HC; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:37:15Z |
HfO2 MIS capacitor with copper gate electrode
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Perng, TH; Chien, CH; Chen, CW; Yang, MJ; Lehnen, P; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:37:09Z |
High-density MIM capacitors with HfO(2) dielectrics
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Perng, TH; Chien, CH; Chen, CW; Lehnen, P; Chang, CY |
| 國立交通大學 |
2014-12-08T15:37:06Z |
Hot-electron-induced electron trapping in 0.13 mu m nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxide
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Chen, CW; Chien, CH; Perng, TH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:36:22Z |
Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments
|
Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
Showing items 1-7 of 7 (1 Page(s) Totally)
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