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Showing items 21-30 of 58 (6 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs(111)A-2?2 from atomic layer deposition
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Fanchiang, Y.-T.;Chiang, T.-H.;Pi, T.-W.;Wertheim, G.K.;Kwo, J.R.;Hong, M.; Fanchiang, Y.-T.; Chiang, T.-H.; Pi, T.-W.; Wertheim, G.K.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structures
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Pi, T.W.;Lin, Y.H.;Fanchiang, Y.T.;Chiang, T.H.;Wei, C.H.;Lin, Y.C.;Wertheim, G.K.;Kwo, J.;Hong, M.; Pi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance
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Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission study
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Cheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Surface electronic structure of epi germanium (001)-2 ? 1
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Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
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Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 ??In comparison with atomic layer deposited Al2O3
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Wan, H.W.;Lin, K.Y.;Cheng, C.K.;Su, Y.K.;Lee, W.C.;Hsu, C.H.;Pi, T.W.;Kwo, J.;Hong, M.; Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
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Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:11Z |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
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MINGHWEI HONG; Hong, M.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Lin, K.Y.;Wan, H.W.;Chen, K.H.M.;Fanchiang, Y.T.;Chen, W.S.;Lin, Y.H.;Cheng, Y.T.;Chen, C.C.;Lin, H.Y.;Young, L.B.;Cheng, C.P.;Pi, T.W.;Kwo, J.;Hong, M.; Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B. |
| 臺大學術典藏 |
2019-12-27T06:48:46Z |
Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template
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Chong, C. W.; Huang, M. J.; Han, H. C.; Lin, Y. K.; Chiu, J. M.; Huang, Y. F.; Lin, H. J.; Pi, T. W.; Lin, J. G.; Chen, L. C.; Chen, K. H.; Chen, Y. F.; Chong, C. W.; YANG-FANG CHEN et al. |
Showing items 21-30 of 58 (6 Page(s) Totally)
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