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"pi t w"的相关文件
显示项目 6-15 / 58 (共6页) 1 2 3 4 5 6 > >> 每页显示[10|25|50]项目
| 臺大學術典藏 |
2020-03-31T08:25:11Z |
Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template
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Chen, Y. F.; Chen, K. H.; Chen, L. C.; Lin, J. G.; Pi, T. W.; Huang, Y. F.; Lin, H. J.; Chong, C. W.; Huang, M. J.; Han, H. C.; Lin, Y. K.; Chiu, J. M. |
| 臺大學術典藏 |
2020-01-13T08:22:31Z |
Initial stages of ultra thin Ti film growth on Si(1 1 1)-7 × 7 surface
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Hsu, H.F.; Lu, M.C.; Fang, C.K.; Chen, L.J.; Hsiao, H.L.; Pi, T.W.; MING-CHANG LU |
| 臺大學術典藏 |
2019-12-27T07:49:30Z |
High-resolution core-level photoemission study of CF 4 -treated Gd 2 O 3 (Ga 2 O 3 ) gate dielectric on Ge probed by synchrotron radiation
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Pi, T.-W.;Huang, M.L.;Lee, W.C.;Chu, L.K.;Lin, T.D.;Chiang, T.H.;Wang, Y.C.;Wu, Y.D.;Hong, M.;Kwo, J.; Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs
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Chang, Y.H.;Huang, M.L.;Chang, P.;Lin, C.A.;Chu, Y.J.;Chen, B.R.;Hsu, C.L.;Kwo, J.;Pi, T.W.;Hong, M.; Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
Electronic structures of Ga 2 O 3 (Gd 2 O 3 ) gate dielectric on n-Ge(001) as grown and after CF 4 plasma treatment: A synchrotron-radiation photoemission study
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Pi, T.-W.;Lee, W.C.;Huang, M.L.;Chu, L.K.;Lin, T.D.;Chiang, T.H.;Wang, Y.C.;Wu, Y.D.;Hong, M.;Kwo, J.; Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(0 0 1)-4 ? 6 surface
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Chang, Y.H.;Huang, M.L.;Chang, P.;Shen, J.Y.;Chen, B.R.;Hsu, C.L.;Pi, T.W.;Hong, M.;Kwo, J.; Chang, Y.H.; Huang, M.L.; Chang, P.; Shen, J.Y.; Chen, B.R.; Hsu, C.L.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:24Z |
Surface-atom core-level shift in GaAs(111)A-2
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MINGHWEI HONG; Kwo, J.; Hong, M.; Wertheim, G.K.; Chiang, T.-H.; Huang, M.-L.; Chen, B.-R.; Pi, T.-W. |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Growth mechanism of atomic layer deposited Al2O3on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors
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Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Effective passivation of In 0.2Ga 0.8As by HfO 2 surpassing Al 2O 3 via in-situ atomic layer deposition
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Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG; Lin, C.A.; Chang, Y.H.; Chang, Y.H.;Lin, C.A.;Liu, Y.T.;Chiang, T.H.;Lin, H.Y.;Huang, M.L.;Lin, T.D.;Pi, T.W.;Kwo, J.;Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:21Z |
Surface passivation of GaSb(100) using molecular beam epitaxy of Y2O3 and atomic layer deposition of Al2O3: A comparative study
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Chu, R.-L.;Hsueh, W.-J.;Chiang, T.-H.;Lee, W.-C.;Lin, H.-Y.;Lin, T.-D.;Brown, G.J.;Chyi, J.-I.;Huang, T.S.;Pi, T.-W.;Kwo, J.R.;Hong, M.; Chu, R.-L.; Hsueh, W.-J.; Chiang, T.-H.; Lee, W.-C.; Lin, H.-Y.; Lin, T.-D.; Brown, G.J.; Chyi, J.-I.; Huang, T.S.; Pi, T.-W.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
显示项目 6-15 / 58 (共6页) 1 2 3 4 5 6 > >> 每页显示[10|25|50]项目
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