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| 國立交通大學 |
2014-12-08T15:14:40Z |
Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate
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Hsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Pilkuhn, M. H.; Tang, S. S.; Chang, C. Y.; Yang, J. Y.; Chung, H. W. |
| 國立交通大學 |
2014-12-08T15:14:16Z |
High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/Ge(x)Si(1-x)/Si substrate
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Luo, Guang-Li; Hsieh, Yen-Chang; Chang, Edward Yi; Pilkuhn, M. H.; Chien, Chao-Hsin; Yang, Tsung-Hsi; Cheng, Chao-Ching; Chang, Chun-Yen |
| 國立臺灣大學 |
1996 |
Optical investigations of dynamic behavior of GaSb/GaAs quantum dots
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Sun, C.-K.; Wang, G.; Bowers, J. E.; Brar, B.; Blank, H.-R.; Kroemer, H.; Pilkuhn, M. H. |
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