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| 國立成功大學 |
2017 |
Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy
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Hsiao, F.-M.;Schnedler, M.;Portz, V.;Huang, Y.-C.;Huang, B.-C.;Shih, M.-C.;Chang, Chang C.-W.;Tu, L.-W.;Eisele, H.;Dunin-Borkowski, R.E.;Ebert, P.;Chiu, Y.-P. |
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