| 元智大學 |
May-18 |
Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition
|
李清庭; Minh Thien Huu Ha); Sa Hoang Huynh; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi |
| 國立交通大學 |
2019-09-02T07:45:39Z |
HfO2/AIN/ln(0.53)Ga(0.47)As MOS Devices Electrical Properties and Reliability Studies
|
Yi-Chang, Edward; Quang-Ho Luc; Huy-Binh Do; Chang, Po-Chun; Lin, Yueh-Chin |
| 國立交通大學 |
2019-04-02T06:04:19Z |
The Growth and Fabrication of High-Performance In0.5Ga0.5As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method.
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Hong Quan Nguyen; Hai Dang Trinh; Yu, Hung Wei; Hsu, Ching Hsiang; Chung, Chen Chen; Binh Tinh Tran; Wong, Yuen Yee; Thanh Hoa Phan Van; Quang Ho Luc; Chiou, Diao Yuan; Chi Lang Nguyen; Dee, Chang Fu; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:04:18Z |
Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs
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Hai-Dang Trinh; Lin, Yue-Chin; Chang, Edward Yi; Hong-Quan Nguyen; Wang, Shin-Yuan; Wong, Yuen-Yee; Binh-Tinh Tran; Quang-Ho Luc; Chi-Lang Nguyen; Dee, Chang-Fu |
| 國立交通大學 |
2019-04-02T05:58:35Z |
Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion Implantation
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Wu, Chia-Hsun; Han, Ping-Cheng; Quang Ho Luc; Hsu, Ching-Yi; Hsieh, Ting-En; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:57:08Z |
Performance Improvement of InGaAs FinFET Using NH3 Treatment
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Chang, Edward Yi; Quang-Ho Luc; Huy-Binh Do; Lin, Yueh-Chin |
| 國立交通大學 |
2018-08-21T05:54:22Z |
Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (001) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition
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Minh Thien Huu Ha; Sa Hoang Huynh; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:54:04Z |
High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications
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Lin, Yen-Ku; Noda, Shuichi; Huang, Chia-Ching; Lo, Hsiao-Chieh; Wu, Chia-Hsun; Quang Ho Luc; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:59Z |
Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application
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Huy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Tuan Anh Nguyen; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:34Z |
Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition
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Minh Thien Huu Ha; Sa Hoang Huynh; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Lee, Ching Ting; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:29Z |
Nonlinear dependence of X-ray diffraction peak broadening in InxGa1-xSb epitaxial layers on GaAs substrates
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Sa Hoang Huynh; Minh Thien Huu Ha; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:38Z |
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
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Quang Ho Luc; Cheng, Shou Po; Chang, Po Chun; Huy Binh Do; Chen, Jin Han; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:21Z |
Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
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Huynh, Sa Hoang; Minh Thien Huu Ha; Huy Binh Do; Quang Ho Luc; Yu, Hung Wei; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:19Z |
Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials
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Huy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:14Z |
Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition
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Sa Hoang Huynh; Minh Thien Huu Ha; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:48:49Z |
Enhancement-mode AlGaN/GaN MIS-HEMTs with Low Threshold Voltage Hysteresis Using Damage-free Neutral Beam Etched Gate Recess
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Lin, Yen-Ku; Noda, Shuichi; Lee, Ruey-Bor; Huang, Chia-Ching; Quang Ho Luc; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:08Z |
Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
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Huy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
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Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors
|
Quang-Ho Luc; Chang, Edward Yi; Trinh, Hai-Dang; Hong-Quan Nguyen; Binh-Tinh Tran; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:36:13Z |
Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers
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Binh-Tinh Tran; Chang, Edward Yi; Lin, Kung-Liang; Luong, Tien-Tung; Yu, Hung-Wei; Huang, Man-Chi; Chung, Chen-Chen; Hai-Dang Trinh; Hong-Quan Nguyen; Chi-Lang Nguyen; Quang-Ho Luc |
| 國立交通大學 |
2014-12-08T15:33:03Z |
Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density
|
Hai-Dang Trinh; Lin, Yueh-Chin; Minh-Thuy Nguyen; Hong-Quan Nguyen; Quoc-Van Duong; Quang-Ho Luc; Wang, Shin-Yuan; Manh-Nghia Nguyen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:30:40Z |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
|
Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
| 國立成功大學 |
2013-05 |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
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Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
