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Institution Date Title Author
國立臺灣大學 2001-06 Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy J.W.P. Hsu, M.J. Manfra, S.N.G. Chu, C.H. Chen, L.N. Pfeiffer,; R.J. Molner

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