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机构	日期	题名	作者
中原大學	2010-01-15	Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers	G. W. Shu; J. S. Wang; J. L. Shen; R. S. Hsiao; J. F. Chen; T. Y. Lin; C. H. Wu; Y. H. Huang;T. N. Yang
中原大學	2010-01-15	Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers	G. W. Shu; J. S. Wang; J. L. Shen; R. S. Hsiao; J. F. Chen; T. Y. Lin; C. H. Wu; Y. H. Huang; T. N. Yang
國立臺灣海洋大學	2010-01-15	Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers	G.W. Shu;J.S. Wang;J.L. Shen;R.S. Hsiao;J.F. Chen;T.Y. Lin;C.H. Wu;Y.H. Huang;T.N. Yang
中原大學	2007-08-07	Relaxation-induced Lattice Misfits and Their Effects on the Emission Properties of InAs Quantum Dots	J. F. Chen;Y. Z. Wang;C. H. Chiang;R. S. Hsiao;Y. H. Wu;L. Chang;J. S. Wang;T. W. Chi;J. Y. Chi
中原大學	2007-05-08	Evidence for the Electron Trap State Associated with N-rich Clusters in InGaAsN/GaAs Quantum Wells	J. F. Chen;P. C. Hsieh;R. S. Hsiao;J. S. Wang;J. Y. Chi
國立東華大學	2007	Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures	祁錦雲; Jim-Yong Chi;J S Wang; S H Yu; Y R Lin; H H Lin; C S Yang; T T Chen; Y F Chen; G W Shu; J L Shen; R S Hsiao; J F Chen
國立東華大學	2007	Evidence for the electron trap state associated with N-rich clusters in InGaAsN/GaAs quantum wells	祁錦雲; Jim-Yong Chi; J F Chen; PC Hsieh; R S Hsiao; J S. Wang
國立臺灣海洋大學	2006-12-14	The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers	G. W. Shu;C. K. Wang;J. S. Wang;J. L. Shen;R. S. Hsiao;W. C. Chou;J. F. Chen;T. Y. Lin;C. H. Ko;C. M. Lai
元智大學	2006-11	The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers	柯正浩; G W Shu; C K Wang; J S Wang; J L Shen; R S Hsiao; W C Chou; J F Chen; T Y Lin; C M Lai
國立東華大學	2006	Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs	祁錦雲; Jim-Yong Chi; H P D Yang; I C Hsu; F I Lai; G Lin; R S Hsiao; N A Maleev; S A Blokhin; H C Kuo; S C Wang
國立東華大學	2006	Strain relaxation and induced defects in InAsSb self-assembled quantum dots	祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; W. D. Huang; Y. H. Wu; L. Chang; J. S. Wang
國立東華大學	2006	Temperature-dependent optical properties of In0:34Ga0:66As1-xNx/GaAs single quantum well with high nitrogen content for 1:55 m application grown by molecular beam epitaxy	祁錦雲; Jim-Yong Chi; Fang-I. Lai ; S.Y. Kuo ; J.S. Wang ; R.S. Hsiao ; H.C. Kuo ; J. Chi; S.C. Wang; H.S. Wang; C.T. Liang; Y.F. Chen
國立東華大學	2006	Single-Mode Monolithic Quantum-Dot VCSEL in 1.3um with Sidemode Suppression Ratio Over 30 dB	祁錦雲; Jim-Yong Chi; Y. H. Chang; P. C. Peng; W. K. Tsai; Gray Lin; FangI Lai; R. S. Hsiao; H. P. Yang; H. C. Yu; K. F. Lin; J. Y. Chi; S. C. Wang; and H. C. Kuo
國立東華大學	2006	Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots	祁錦雲; Jim-Yong Chi; J. F. Chen;R. S. Hsiao; M. F. Hsieh; J. S. Wang; J. Y. Chi
國立東華大學	2006	Evolution of conduction and 5 interface states of laterally wet-oxidized AlGaAs with oxidation time	祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; W. K. Hung; J. S. Wang
中原大學	2005-09-29	Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling	J. F. Chen;R. S. Hsiao;Y. P. Chen;J. S. Wang;J. Y. Chi
中原大學	2005-07	Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs	J. F. Chen;R. S. Hsiao;C. K. Wang;J. S. Wang;J. Y. Chi
國立東華大學	2005	1.3 μm Quantum Dot Vertical Cavity Surface Emitting Laser with External Light Injection	祁錦雲; Jim-Yong Chi; P. C. Peng; Y. H. Chang; H. C. Kuo; W. K. Tsai; Gray Lin;C. T. Lin; H. C. Yu; H. P. Yang; R. S. Hsiao; K. F. Lin;S. Chi; S. C. Wang
國立東華大學	2005	Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling	祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; Y. P. Chen; J.S.Wang
國立東華大學	2005	N incorporation into InGaAs cap layer in InAs self-assembled quantum dots	祁錦雲; Jim-Yong Chi; J. F. Chen; R. S. Hsiao; P. C. Hsieh; Y. J. Chen; Y. P. Chen; J. S. Wang; J. Y. Chi
國立東華大學	2005	Single mode InAs quantum dot photonic crystal VCSELs	祁錦雲; Jim-Yong Chi; H.P.D. Yang; Y.H. Chang; F.I. Lai; H.C. Yu; Y.J. Hsu; G. Lin; R.S. Hsiao; H.C. Kuo; S.C. Wang ;J.Y. Chi
國立東華大學	2005	Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy	祁錦雲; Jim-Yong Chi; K. P. Chang; S. L. Yang; D. S. Chuu; R. S. Hsiao; J. F. Chen; L. Wei; J. S. Wang; J. Y. Chi
國立東華大學	2005	MBE growth of high quality vertically coupled InAs/GaAs quantum dots laser emitting around 1.3um	祁錦雲; Jim-Yong Chi; R. S. Hsiao; J. S. Wang; G. Lin; C. Y. Liang; H. Y. Liu; T.W.Chi; J. F. Chen;J. Y. Chi
國立東華大學	2004	The influence of Quantum-dot Period on High Performance InAs/GaAs Quantum0-dot Infrared Photodetectors	祁錦雲; Jim-Yong Chi; S.T. Chou; M. C. Wu; S. Y. Lin; R.S. Hsiao; L.C. Wei; J.S. Wang; J. Y. Chi
國立東華大學	2004	The observatin of Photoluminescence Decay for MBE Grown 1.3 um InGaAsN/GaAs Quantum Well Structure	祁錦雲; Jim-Yong Chi; R.S. Hsiao;C.Y. Liang; S. Y. Lin; J.S. Wang; J.Y. Chi

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