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"rahaman s z"
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| 臺大學術典藏 |
2021-09-02T00:04:20Z |
Size-Dependent Switching Properties of Spin-Orbit Torque MRAM with Manufacturing-Friendly 8-Inch Wafer-Level Uniformity
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Rahaman S.Z;Su Y.-H;Chen G.-L;Chen F.-M;Wei J.-H;Hou T.-H;Sheu S.-S;Wu C.-I;Deng D.-L;Wang I.-J;Wang D.-Y;Pai C.-F;Hsin Y.-C;Yang S.-Y;Lee H.-H;Chang Y.-J;Kuo Y.-C.; Rahaman S.Z; CHIH-I WU et al. |
| 臺大學術典藏 |
2021-09-02T00:04:17Z |
Fabrication and device characterization of large linear dynamic range tunnel magnetoresistance (TMR) sensors for system applications
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Chen F.-M;Wang I.-J;Wang D.-Y;Yang S.-Y;Hsin Y.-C;Chang Y.-J;Lee H.-H;Chen G.-L;Kuo Y.-C;Su Y.-H;Rahaman S.Z;Wei J.-H;Li S.-H;Sheu S.-S;Lo W.-C;Chang S.-C;Wu C.-I.; Chen F.-M; CHIH-I WU et al. |
| 臺大學術典藏 |
2021-09-02T00:04:14Z |
A Large dynamic range current sensor using magnetic tunnel junction on 8' si process line
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Wang D.Y;Wang I.J;Lin C.S;Su J.W;Lee H.H;Hsin Y.C;Yang S.Y;Chang Y.J;Kuo Y.C;Su Y.H;Rahaman S.Z;Chen G.L;Li S.H;Wei J.H;Huang K.C;Wu C.I.; Wang D.Y; CHIH-I WU et al. |
| 臺大學術典藏 |
2020-06-11T06:14:34Z |
Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell
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Rahaman, S.Z.;Wang, I.-J.;Chen, T.-Y.;Pai, C.-F.;Wang, D.-Y.;Wei, J.-H.;Lee, H.-H.;Hsin, Y.-C.;Chang, Y.-J.;Yang, S.-Y.;Kuo, Y.-C.;Su, Y.-H.;Chen, Y.-S.;Huang, K.-C.;Wu, C.-I.;Deng, D.-L.; Rahaman, S.Z.; Wang, I.-J.; Chen, T.-Y.; Pai, C.-F.; Wang, D.-Y.; Wei, J.-H.; Lee, H.-H.; Hsin, Y.-C.; Chang, Y.-J.; Yang, S.-Y.; Kuo, Y.-C.; Su, Y.-H.; Chen, Y.-S.; Huang, K.-C.; Wu, C.-I.; Deng, D.-L.; CHIH-I WU |
| 國立臺灣大學 |
2012 |
Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structure
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Banerjee, W.; Maikap, S.; Rahaman, S.Z.; Prakash, A.; Tien, T.-C.; Li, W.-C.; Yang, J.-R. |
Showing items 1-5 of 5 (1 Page(s) Totally)
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