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Showing items 21-45 of 75 (3 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T09:27:14Z |
Tropical cyclone and extreme rainfall trends in East Asian summer monsoon since mid-20th century
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Chang, C.-P.; Lei, Y.; Sui, C.-H.; Lin, X.; Ren, F.; Chang, C.-P.; Lei, Y.; Sui, C.-H.; Lin, X.; Ren, F.; CHUNG-HSIUNG SUI |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN metal oxide semiconductor field effect transistors
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Ren, F; Pearton, SJ; Abernathy, CR; Baca, A; Cheng, P; Shul, RJ; Chu, SNG; Hong, M; Schurman, MJ; Lothian, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:25Z |
Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs
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Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:25Z |
Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
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Ren, F; Hong, M; Chu, SNG; Marcus, MA; Schurman, MJ; Baca, A; Pearton, SJ; Abernathy, CR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3 (Gd2O3) as the gate oxide
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Hong, M; Ren, F; Kuo, JM; Hobson, WS; Kwo, J; Mannaerts, JP; Lothian, JR; Chen, YK; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectrics
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Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Marcus, MA; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors
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Abernathy, CR; Baca, A; Chu, SNG; Hong, M; Lothian, JR; Marcus, MA; Pearton, SJ; Ren, F; Schurman, MJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:22Z |
Demonstration of enhancement-mode p-and n-channel GaAs MOSFETS with Ga 2 O 3 (Gd 2 O 3) As gate oxide
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Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:20Z |
Wet Chemical and Plasma Etching of Ga2 O 3 (Gd2 O 3)
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Ren, F; Hong, M; Mannaerts, JP; Lothian, JR; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
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Ren, F; Hong, M; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:18Z |
Dielectrics for GaN based MIS-diodes
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Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Macos, M; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:14Z |
DEMONSTRATION OF ENHANCEMENT-MODE p-CHANNEL GaAs MOSFETs WITH Ga 2 O 3 (Gd 2 O 3) PASSIVATION
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Ren, F; Hong, M; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Low D it, thermodynamically stable Ga 2 O 3-GaAs interfaces: fabrication, characterization, and modeling
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Passlack, M; Hong, M; Mannaerts, JP; Opila, RL; Chu, SNG; Moriya, N; Ren, F; Kwo, JR; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:16Z |
Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates
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Ren, F;Hong, MW;Hobson, WS;Kuo, JM;Lothian, JR;Mannaerts, JP;Kwo, J;Chen, YK;Cho, A'Y; Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs
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Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
GaN electronics for high power, high temperature applications
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Pearton, SJ; Ren, F; Zhang, AP; Dang, G; Cao, XA; Cho, H; Abernathy, CR; Han, J; Baca, AG; Monier, C; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:31Z |
in-V MOSFET Using Ga203/Gd203 As The Gate Oxide
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Ren, F; Hong, M; Wang, YC; Kwo, J; Mannaerts, JP; Abernathy, CR; Pearton, SJ; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:24:06Z |
Effects of semiconductor processing chemicals on conductivity of graphene
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Chen, Chung Wei; Ren, F.; Chi, Gou-Chung; Hung, S. C.; Huang, Y. P.; Kim, Jihyun; Kravchenko, Ivan; Pearton, Stephen J. |
| 國立交通大學 |
2014-12-08T15:21:11Z |
Oxygen sensors made by monolayer graphene under room temperature
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Chen, C. W.; Hung, S. C.; Yang, M. D.; Yeh, C. W.; Wu, C. H.; Chi, G. C.; Ren, F.; Pearton, S. J. |
| 國家衛生研究院 |
2014-03 |
Investigation of C-terminal domain of SARS nucleocapsid protein - Duplex DNA interaction using transistors and binding-site models
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Hsu, YR;Kang, YW;Fang, JY;Lee, GY;Chyi, JI;Chang, Ck;Huang, CC;Hsu, CP;Huang, Th;Huang, YF;Sun, YC;Hsu, CH;Chen, CC;Sheng-Shian, L;Yeh, JA;Yao, DJ;Ren, F;Wang, YL |
| 國家衛生研究院 |
2013-11-28 |
Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids
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Fang, JY;Lee, GY;Chyi, JI;Hsu, CP;Kang, YW;Fang, KC;Kao, WL;Yao, DJ;Hsu, CH;Huang, YF;Chen, CC;Li, SS;Yeh, JA;Ren, F;Wang, YL |
| 國家衛生研究院 |
2013-05 |
Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models
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Kang, YW;Lee, GY;Chyi, JI;Hsu, CP;Hsu, YR;Hsu, CH;Huang, YF;Sun, YC;Chen, CC;Chun Hung, S;Ren, F;Andrew Yeh, J;Wang, YL |
| 國家衛生研究院 |
2013-03 |
AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study
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Huang, CC;Lee, GY;Chyi, JI;Cheng, HT;Hsu, CP;Hsu, YR;Hsu, CH;Huang, YF;Sun, YC;Chen, CC;Li, SS;Andrew Yeh, J;Yao, DJ;Ren, F;Wang, YL |
| 國立成功大學 |
2008-05-19 |
Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)
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Tsao, F. C.; Chen, J. Y.; Kuo, C. H.; Chi, Gou-Chung; Pan, Ching-Jen; Huang, P. J.; Tun, Chun-Ju; Pong, B. J.; Hsueh, T. H.; Chang, C. Y.; Pearton, S. J.; Ren, F. |
| 國立臺灣大學 |
2008-01 |
GaN, ZnO and InN Nanowires and Devices
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Pearton, S. J.; Kang, B. S.; Gila, B. P.; Norton, D. P.; Kryliouk, O.; Ren, F.; Heo, Young-Woo; Chang, Chih-Yang; Chi, Gou-Chung; Wang, Li-Chyong; Chen, Wei-Ming |
Showing items 21-45 of 75 (3 Page(s) Totally)
1 2 3 > >>
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