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Showing items 1-10 of 16  (2 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2020-10-05T02:02:24Z A Reconfigurable, Pulse-shaping Potentiometric Readout System for Bio-Sensing Transistors Lu, Shao-Yung; Shan, Siang-Sin; Yang, Jiancheng; Chang, Chin-Wei; Ren, Fan; Lin, Jenshan; Pearton, Stephen; Liao, Yu-Te
國立交通大學 2020-01-02T00:04:24Z Review-Opportunities for Rapid, Sensitive Detection of Troponin and Cerebral Spinal Fluid Using Semiconductor Sensors Carey, Patrick H.; Lobo, Brian C.; Gebhard, Michael P.; Leon, Marino E.; Flax, Sherri D.; Harris, Neil S.; Liao, Yu-Te; Chang, Chin-Wei; Lin, Jenshan; Ren, Fan; Pearton, S. J.
國立交通大學 2019-11-01 Effect of thermal annealing for W/beta-Ga2O3 Schottky diodes up to 600 degrees C Pearton, Stephen J.; Liao, Yu-Te; Tadjer, Marko; Chen, Yen-Ting; Gila, Brent P.; Ren, Fan; Xian, Minghan; Fares, Chaker
國立交通大學 2019-10-05T00:09:47Z DC and dynamic switching characteristics of field-plated vertical geometry beta-Ga2O3 rectifiers Yang, Jiancheng; Carey, Patrick; Ren, Fan; Chen, Yen-Ting; Liao, Y.; Chang, Chin-Wei; Lin, Jenshan; Tadjer, Marko; Pearton, S. J.; Smith, David J.; Kuramata, Akito
國立交通大學 2019-08-02T02:18:33Z Implementation of a 900 V Switching Circuit for High Breakdown Voltage beta-Ga2O3 Schottky Diodes Chen, Yen-Ting; Yang, Jiancheng; Ren, Fan; Chang, Chin-Wei; Lin, Jenshan; Pearton, S. J.; Tadjer, Marko J.; Kuramata, Akito; Liao, Yu-Te
國立交通大學 2019-04-02T06:00:32Z Switching Behavior and Forward Bias Degradation of 700V, 0.2A, beta-Ga2O3 Vertical Geometry Rectifiers Yang, Jiancheng; Fares, Chaker; Ren, Fan; Chen, Yen-Ting; Liao, Yu-Te; Chang, Chin-Wei; Lin, Jenshan; Tadjer, Marko; Smith, David J.; Pearton, S. J.; Kuramata, Akito
國立交通大學 2019-04-02T05:58:41Z Dynamic Switching Characteristics of 1 A Forward Current beta-Ga2O3 Rectifiers Yang, Jiancheng; Ren, Fan; Chen, Yen-Ting; Liao, Yu-Te; Chang, Chin-Wei; Lin, Jenshan; Tadjer, Marko J.; Pearton, S. J.; Kuramata, Akito
臺大學術典藏 2018-09-10T07:34:09Z Gallium-gadolinium oxide gate oxide etch stop layer Cho, Alfred Yi; Hong, Minghwei; Lothian, James Robert; Mannaerts, Joseph Petrus; Ren, Fan; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:34:09Z Article comprising an oxide layer on GAN Hobson, William Scott; Hong, Minghwei; Lothian, James Robert; Mannaerts, Joseph Petrus; Ren, Fan; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:13Z Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG

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