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"rokhinson l p"
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| 臺大學術典藏 |
2018-09-10T09:48:17Z |
Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition
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Li, J.-Y.;Huang, C.-T.;Rokhinson, L.P.;Sturm, J.C.; Li, J.-Y.; Huang, C.-T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:48:17Z |
Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition
|
Li, J.-Y.;Huang, C.-T.;Rokhinson, L.P.;Sturm, J.C.; Li, J.-Y.; Huang, C.-T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating
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Li, J.Y.; Huang, C.T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI |
Showing items 1-3 of 3 (1 Page(s) Totally)
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