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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立成功大學 |
2021 |
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Recessed-Gate and GaO Gate Insulator Layer
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Lee, H.-Y.;Chang, T.-W.;Chang, E.Y.;Rorsman, N.;Lee, C.-T. |
| 國立成功大學 |
2021 |
Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3Gate Dielectric Layer
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Jian, Jian J.-J.;Lee, H.-Y.;Chang, E.Y.;Rorsman, N.;Lee, C.-T. |
| 國立交通大學 |
2014-12-08T15:13:45Z |
DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx
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Shiu, J. Y.; Desmaris, V.; Rorsman, N.; Kumakura, K.; Makimoto, T.; Zirath, H.; Chang, E. Y. |
| 國立交通大學 |
2014-12-08T15:12:13Z |
Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs
|
Desmaris, V.; Shiu, J. Y.; Rorsman, N.; Zirath, H.; Chang, E. Y. |
Showing items 1-4 of 4 (1 Page(s) Totally)
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