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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 元智大學 |
May-21 |
Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer
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李清庭; Jian, Jhang-Jie; Lee, Hsin-Ying; Chang, Edward Yi; Rorsman, Niklas |
| 元智大學 |
Mar-21 |
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga2O3 Gate Insulator Layer
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李清庭; Lee, Hsin-Ying; Chang, Ting-Wei; Chang, Edward Yi; Rorsman, Niklas |
| 國立交通大學 |
2019-04-02T05:58:38Z |
A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs
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Lin, Yen-Ku; Bergsten, Johan; Leong, Hector; Malmros, Anna; Chen, Jr-Tai; Chen, Ding-Yuan; Kordina, Olof; Zirath, Herbert; Chang, Edward Yi; Rorsman, Niklas |
| 國立交通大學 |
2014-12-08T15:16:09Z |
Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AIGaN/GaN heterostructures
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Desmaris, Vincent; Shiu, Jin-Yu; Lu, Chung-Yu; Rorsman, Niklas; Zirath, Herbert; Chang, Edward-Yi |
| 國立交通大學 |
2014-12-08T15:13:56Z |
Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs
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Shiu, Jin-Yu; Huang, Jui-Chien; Desmaris, Vincent; Chang, Chia-Ta; Lu, Chung-Yu; Kumakura, Kazuhide; Makimoto, Toshiki; Zirath, Herbert; Rorsman, Niklas; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:07:41Z |
Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation
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Shiu, Jin-Yu; Lu, Chung-Yu; Su, Ting-Yi; Huang, Rong-Tan; Zirath, Herbert; Rorsman, Niklas; Chang, Edward Yi |
Showing items 1-6 of 6 (1 Page(s) Totally)
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