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Institution Date Title Author
國立交通大學 2014-12-08T15:25:15Z Direct experimental evidence of the hole capture by resonant levels in boron doped silicon Yen, ST; Tulupenko, V; Cheng, ES; Dalakyan, A; Lee, CP; Chao, KA; Belykh, V; Abramov, A; Ryzhkov, V

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